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Terrace grading of SiGe for high-quality virtual substrates
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Capewell, Adam Daniel, Grasby, T. J., Whall, Terry E. and Parker, Evan H. C. (2002) Terrace grading of SiGe for high-quality virtual substrates. Applied Physics Letters, Vol.81 (No.25). pp. 4775-4777. doi:10.1063/1.1529308 ISSN 0003-6951.
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Official URL: http://dx.doi.org/10.1063/1.1529308
Abstract
Silicon germanium (SiGe) virtual substrates of final germanium composition x = 0.50 have been fabricated using solid-source molecular beam epitaxy with a thickness of 2 µm. A layer structure that helps limit the size of dislocation pileups associated with the modified Frank–Read dislocation multiplication mechanism has been studied. It is shown that this structure can produce lower threading dislocation densities than conventional linearly graded virtual substrates. Cross-sectional transmission electron microscopy shows the superior quality of the dislocation network in the graded regions with a lower rms roughness shown by atomic force microscopy. X-ray diffractometry shows these layers to be highly relaxed. This method of Ge grading suggests that high-quality virtual substrates can be grown considerably thinner than with conventional grading methods.
| Item Type: | Journal Article | ||||
|---|---|---|---|---|---|
| Subjects: | T Technology > TK Electrical engineering. Electronics Nuclear engineering Q Science > QC Physics |
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| Divisions: | Faculty of Science, Engineering and Medicine > Science > Physics | ||||
| Library of Congress Subject Headings (LCSH): | Germanium alloys, Silicon alloys, Molecular beam epitaxy, Stoichiometry, Semiconductor films, Dislocations in metals, Atomic force microscopy, Transmission electron microscopy | ||||
| Journal or Publication Title: | Applied Physics Letters | ||||
| Publisher: | American Institute of Physics | ||||
| ISSN: | 0003-6951 | ||||
| Official Date: | 16 December 2002 | ||||
| Dates: |
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| Volume: | Vol.81 | ||||
| Number: | No.25 | ||||
| Page Range: | pp. 4775-4777 | ||||
| DOI: | 10.1063/1.1529308 | ||||
| Status: | Peer Reviewed | ||||
| Access rights to Published version: | Open Access (Creative Commons) |
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