Capewell, A. D., Grasby, T. J., Whall, Terry E. and Parker, Evan H. C.. (2002) Terrace grading of SiGe for high-quality virtual substrates. Applied Physics Letters, Vol.81 (No.25). pp. 4775-4777. ISSN 0003-6951

Preview

PDF WRAP_Capewell_terrace_grading.pdf - Requires a PDF viewer such as GSview, Xpdf or Adobe Acrobat Reader Download (203Kb)

Abstract

Silicon germanium (SiGe) virtual substrates of final germanium composition x = 0.50 have been fabricated using solid-source molecular beam epitaxy with a thickness of 2 µm. A layer structure that helps limit the size of dislocation pileups associated with the modified Frank–Read dislocation multiplication mechanism has been studied. It is shown that this structure can produce lower threading dislocation densities than conventional linearly graded virtual substrates. Cross-sectional transmission electron microscopy shows the superior quality of the dislocation network in the graded regions with a lower rms roughness shown by atomic force microscopy. X-ray diffractometry shows these layers to be highly relaxed. This method of Ge grading suggests that high-quality virtual substrates can be grown considerably thinner than with conventional grading methods.

Item Type:	Journal Article
Subjects:	T Technology > TK Electrical engineering. Electronics Nuclear engineering Q Science > QC Physics
Divisions:	Faculty of Science > Physics
Library of Congress Subject Headings (LCSH):	Germanium alloys, Silicon alloys, Molecular beam epitaxy, Stoichiometry, Semiconductor films, Dislocations in metals, Atomic force microscopy, Transmission electron microscopy
Journal or Publication Title:	Applied Physics Letters
Publisher:	American Institute of Physics
ISSN:	0003-6951
Date:	16 December 2002
Volume:	Vol.81
Number:	No.25
Page Range:	pp. 4775-4777
Identification Number:	10.1063/1.1529308
Status:	Peer Reviewed
Access rights to Published version:	Open Access
References:	# J. W. Matthews and A. E. Blakeslee, J. Cryst. Growth 27, 118 (1974). # E. A. Fitzgerald and S. B. Samavedam, Thin Solid Films 294, 3 (1997). # E. A. Stach, K. W. Schwarz, R. Hull, F. M. Ross, and R. M. Tromp, Phys. Rev. Lett. 84, 947 (2000). # F. K. Legoues, B. S. Meyerson, J. F. Morar, and P. D. Kirchner, J. Appl. Phys. 71, 4230 (1992). # M. A. Lutz, R. M. Feenstra, F. K. LeGoues, P. M. Mooney, and J. O. Chu, Appl. Phys. Lett. 66, 724 (1995). # P. M. Mooney, J. L. Jordan-Sweet, J. O. Chu, and F. K. LeGoues, Appl. Phys. Lett. 66, 3642 (1995). # J. M. Hartmann, B. Gallas, R. Ferguson, J. Fernadez, J. Zhang, and J. J. Harris, Semicond. Sci. Technol. 15, 362 (2000). # J. Michel, E. A. Fitzgerald, Y.-H. Xie P. S. Silverman, M. Morse, and L. C. Kimerling, J. Electron. Mater. 21, 1099 (1992). # D. G. Schimmel, J. Electrochem. Soc. 123, 734 (1976).
URI:	http://wrap.warwick.ac.uk/id/eprint/990

Request changes to a record

Actions (login required)

View Item