The Library
Hall mobility enhancement caused by annealing of Si0.2Ge0.8/Si0.7Ge0.3/Si(001) p-type modulation-doped heterostructures
Tools
Tools
Tools
Myranov, Maksym, Phillips, P. J. (Peter J.), Whall, Terry E. and Parker, Evan H. C. (2002) Hall mobility enhancement caused by annealing of Si0.2Ge0.8/Si0.7Ge0.3/Si(001) p-type modulation-doped heterostructures. Applied Physics Letters, Vol.80 (No.19). pp. 3557-3559. doi:10.1063/1.1478779 ISSN 0003-6951.
![[img]](https://wrap.warwick.ac.uk/style/images/fileicons/application_pdf.png)
|
PDF
WRAP_Myronov_Hall_Mobility.pdf - Requires a PDF viewer. Download (146Kb) |
Official URL: http://dx.doi.org/10.1063/1.1478779
Abstract
The effect of post-growth furnace thermal annealing (FTA) on the Hall mobility and sheet carrier density measured at 9–300 K in the Si0.2Ge0.8/Si0.7Ge0.3/Si(001) p-type modulation-doped heterostructures was studied. FTA treatments in the temperature range of 600–900 °C for 30 min were performed on similar heterostructures but with two Si0.2Ge0.8 channel thicknesses. The annealing at 600 °C is seen to have a negligible effect on the Hall mobility as well as on the sheet carrier density. Increases in the annealing temperature resulted in pronounced successive increases of the mobility. For both samples the maximum Hall mobility was observed after FTA at 750 °C. Further increases of the annealing temperature resulted in a decrease in mobility. The sheet carrier density showed the opposite behavior with an increase in annealing temperature. The mechanism causing this behavior is discussed. Structural characterization of as-grown and annealed samples was done by cross-sectional transmission electron microscopy.
| Item Type: | Journal Article | ||||
|---|---|---|---|---|---|
| Subjects: | T Technology > TK Electrical engineering. Electronics Nuclear engineering Q Science > QC Physics |
||||
| Divisions: | Faculty of Science, Engineering and Medicine > Science > Physics | ||||
| Library of Congress Subject Headings (LCSH): | Germanium alloys, Silicon alloys, Hall effect, Annealing of metals, Semiconductors -- Junctions, Electron mobility | ||||
| Journal or Publication Title: | Applied Physics Letters | ||||
| Publisher: | American Institute of Physics | ||||
| ISSN: | 0003-6951 | ||||
| Official Date: | 13 May 2002 | ||||
| Dates: |
|
||||
| Volume: | Vol.80 | ||||
| Number: | No.19 | ||||
| Page Range: | pp. 3557-3559 | ||||
| DOI: | 10.1063/1.1478779 | ||||
| Status: | Peer Reviewed | ||||
| Access rights to Published version: | Open Access (Creative Commons) |
Request changes or add full text files to a record
Repository staff actions (login required)
 |
View Item |
Downloads
Downloads per month over past year
