Myranov, Maksym, Phillips, P. J. (Peter J.), Whall, Terry E. and Parker, Evan H. C.. (2002) Hall mobility enhancement caused by annealing of Si0.2Ge0.8/Si0.7Ge0.3/Si(001) p-type modulation-doped heterostructures. Applied Physics Letters, Vol.80 (No.19). pp. 3557-3559. ISSN 0003-6951

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Abstract

The effect of post-growth furnace thermal annealing (FTA) on the Hall mobility and sheet carrier density measured at 9–300 K in the Si0.2Ge0.8/Si0.7Ge0.3/Si(001) p-type modulation-doped heterostructures was studied. FTA treatments in the temperature range of 600–900 °C for 30 min were performed on similar heterostructures but with two Si0.2Ge0.8 channel thicknesses. The annealing at 600 °C is seen to have a negligible effect on the Hall mobility as well as on the sheet carrier density. Increases in the annealing temperature resulted in pronounced successive increases of the mobility. For both samples the maximum Hall mobility was observed after FTA at 750 °C. Further increases of the annealing temperature resulted in a decrease in mobility. The sheet carrier density showed the opposite behavior with an increase in annealing temperature. The mechanism causing this behavior is discussed. Structural characterization of as-grown and annealed samples was done by cross-sectional transmission electron microscopy.

Item Type:	Journal Article
Subjects:	T Technology > TK Electrical engineering. Electronics Nuclear engineering Q Science > QC Physics
Divisions:	Faculty of Science > Physics
Library of Congress Subject Headings (LCSH):	Germanium alloys, Silicon alloys, Hall effect, Annealing of metals, Semiconductors -- Junctions, Electron mobility
Journal or Publication Title:	Applied Physics Letters
Publisher:	American Institute of Physics
ISSN:	0003-6951
Official Date:	13 May 2002
Volume:	Vol.80
Number:	No.19
Page Range:	pp. 3557-3559
Identification Number:	10.1063/1.1478779
Status:	Peer Reviewed
Access rights to Published version:	Open Access
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URI:	http://wrap.warwick.ac.uk/id/eprint/991

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