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Extremely high room-temperature two-dimensional hole gas mobility in Ge/Si0.33Ge0.67/Si(001) p-type modulation-doped heterostructures

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Myranov, Maksym, Irisawa, T., Mironov, Oleg A., Koh, S., Shiraki, Y., Whall, Terry E. and Parker, Evan H. C.. (2002) Extremely high room-temperature two-dimensional hole gas mobility in Ge/Si0.33Ge0.67/Si(001) p-type modulation-doped heterostructures. Applied Physics Letters, Vol.80 (No.17). pp. 3117-3119. ISSN 0003-6951

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Official URL: http://dx.doi.org/10.1063/1.1473690

Abstract

To extract the room-temperature drift mobility and sheet carrier density of two-dimensional hole gas (2DHG) that form in Ge strained channels of various thicknesses in Ge/Si0.33Ge0.67/Si(001) p-type modulation-doped heterostructures, the magnetic field dependences of the magnetoresistance and Hall resistance at temperature of 295 K were measured and the technique of maximum entropy mobility spectrum analysis was applied. This technique allows a unique determination of mobility and sheet carrier density of each group of carriers present in parallel conducting multilayers semiconductor heterostructures. Extremely high room-temperature drift mobility (at sheet carrier density) of 2DHG 2940 cm2 V–1 s–1 (5.11×1011 cm–2) was obtained in a sample with a 20 nm thick Ge strained channel.

Item Type:	Journal Article
Subjects:	T Technology > TK Electrical engineering. Electronics Nuclear engineering Q Science > QC Physics
Divisions:	Faculty of Science > Physics
Library of Congress Subject Headings (LCSH):	Germanium alloys, Silicon alloys, Semiconductors -- Junctions, Hall effect, Modulation-doped field-effect transistors
Journal or Publication Title:	Applied Physics Letters
Publisher:	American Institute of Physics
ISSN:	0003-6951
Official Date:	29 April 2002
Volume:	Vol.80
Number:	No.17
Page Range:	pp. 3117-3119
Identification Number:	10.1063/1.1473690
Status:	Peer Reviewed
Access rights to Published version:	Open Access
Funder:	Japan. Monbu Kagakushō [Japan. Ministry of Education, Culture, Sports, Science and Technology] (MK), Nihon Gakujutsu Shinkōkai [Japan Society for the Promotion of Science] (NGS)
Grant number:	11232202 (MK)
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URI:	http://wrap.warwick.ac.uk/id/eprint/992