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Quantum dots in suspended single-wall carbon nanotubes

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Nygård, Jesper and Cobden, David H. (2001) Quantum dots in suspended single-wall carbon nanotubes. Applied Physics Letters, Vol.79 (No.25). pp. 4216-4218. doi:10.1063/1.1428117

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Official URL: http://dx.doi.org/10.1063/1.1428117

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Abstract

We present a simple technique which uses a self-aligned oxide etch to suspend individual single-wall carbon nanotubes between metallic electrodes. This enables one to compare the properties of a particular nanotube before and after suspension, as well as to study transport in suspended tubes. As an example of the utility of the technique, we study quantum dots in suspended tubes, finding that their capacitances are reduced owing to the removal of the dielectric substrate.

Item Type: Journal Article
Subjects: T Technology > TK Electrical engineering. Electronics Nuclear engineering
Q Science > QC Physics
Divisions: Faculty of Science, Engineering and Medicine > Science > Physics
Library of Congress Subject Headings (LCSH): Quantum dots, Nanotubes, Semiconductors, Electric capacity, Semiconductors -- Etching
Journal or Publication Title: Applied Physics Letters
Publisher: American Institute of Physics
ISSN: 0003-6951
Official Date: 1 December 2001
Dates:
DateEvent
1 December 2001Published
Volume: Vol.79
Number: No.25
Page Range: pp. 4216-4218
DOI: 10.1063/1.1428117
Status: Peer Reviewed
Access rights to Published version: Open Access

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