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The effect of film thickness on the gas sensing properties of ultra-thin TiO2 films deposited by atomic layer deposition

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Wilson, Rachel, Simion, Cristian, Blackman, Christopher, Carmalt, Claire, Stanoiu, Adelina, Di Maggio, Francesco and Covington, James A. (2018) The effect of film thickness on the gas sensing properties of ultra-thin TiO2 films deposited by atomic layer deposition. Sensors, 18 (3). 735. doi:10.3390/s18030735

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Official URL: http://dx.doi.org/10.3390/s18030735

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Abstract

Analyte sensitivity for gas sensors based on semiconducting metal oxides should be highly dependent on the film thickness, particularly when that thickness is on the order of the Debye length. This thickness dependence has previously been demonstrated for SnO2 and inferred for TiO2. In this paper, TiO2 thin films have been prepared by Atomic Layer Deposition (ALD) using titanium isopropoxide and water as precursors. The deposition process was performed on standard alumina gas sensor platforms and microscope slides (for analysis purposes), at a temperature of 200 °C. The TiO2 films were exposed to different concentrations of CO, CH4, NO2, NH3 and SO2 to evaluate their gas sensitivities. These experiments showed that the TiO2 film thickness played a dominant role within the conduction mechanism and the pattern of response for the electrical resistance towards CH4 and NH3 exposure indicated typical n-type semiconducting behavior. The effect of relative humidity on the gas sensitivity has also been demonstrated.

Item Type: Journal Article
Subjects: T Technology > TK Electrical engineering. Electronics Nuclear engineering
Divisions: Faculty of Science, Engineering and Medicine > Engineering > Engineering
Library of Congress Subject Headings (LCSH): Metal oxide semiconductors, Gas detectors -- Design and construction, Thin films, Atomic layer deposition, Titanium compounds
Journal or Publication Title: Sensors
Publisher: MDPI AG
ISSN: 1424-8220
Official Date: 1 March 2018
Dates:
DateEvent
1 March 2018Published
20 February 2018Accepted
Volume: 18
Number: 3
Article Number: 735
DOI: 10.3390/s18030735
Status: Peer Reviewed
Publication Status: Published
Access rights to Published version: Open Access
RIOXX Funder/Project Grant:
Project/Grant IDRIOXX Funder NameFunder ID
EP/M506448/1Engineering and Physical Sciences Research Councilhttp://dx.doi.org/10.13039/501100000266
PN16480102/2017Autoritatea Natională pentru Cercetare Stiintificăhttp://dx.doi.org/10.13039/501100005802

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