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Controlled oxide removal for the preparation of damage-free InAs(110) surfaces

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Veal, T. D. (Tim D.) and McConville, C. F. (Chris F.). (2000) Controlled oxide removal for the preparation of damage-free InAs(110) surfaces. Applied Physics Letters, Vol.77 (No.11). pp. 1665-1667. ISSN 0003-6951

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Official URL: http://dx.doi.org/10.1063/1.1310211

Abstract

Controlled oxide removal from InAs(110) surfaces using atomic hydrogen (H*) has been achieved by monitoring the contaminant vibrational modes with high resolution electron energy loss spectroscopy (HREELS). The contributing oxide vibrational modes of the partially H* cleaned surface have been identified. Following hydrocarbon desorption during preliminary annealing at 360 °C, exposure to atomic hydrogen at 400 °C initially removes the arsenic oxides and indium suboxides; complete indium oxide removal requires significantly higher hydrogen doses. After a total molecular hydrogen dose of 120 kL, a clean, ordered surface, exhibiting a sharp (1×1) pattern, was confirmed by low energy electron diffraction and x-ray photoelectron spectroscopy. Energy dependent HREELS studies of the near-surface electronic structure indicate that no residual electronic damage or dopant passivation results from the cleaning process.

Item Type:	Journal Article
Subjects:	T Technology > TK Electrical engineering. Electronics Nuclear engineering Q Science > QC Physics
Divisions:	Faculty of Science > Physics
Library of Congress Subject Headings (LCSH):	Indium compounds, Oxidation, Electron energy loss spectroscopy, Low energy electron diffraction, X-ray photoelectron spectroscopy
Journal or Publication Title:	Applied Physics Letters
Publisher:	American Institute of Physics
ISSN:	0003-6951
Date:	11 September 2000
Volume:	Vol.77
Number:	No.11
Page Range:	pp. 1665-1667
Identification Number:	10.1063/1.1310211
Status:	Peer Reviewed
Access rights to Published version:	Open Access
Funder:	Engineering and Physical Sciences Research Council (EPSRC)
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URI:	http://wrap.warwick.ac.uk/id/eprint/995