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Simulation study of ballistic spin-MOSFET devices with ferromagnetic channels based on some Heusler and oxide compounds
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Graziosi, Patrizio and Neophytou, Neophytos (2018) Simulation study of ballistic spin-MOSFET devices with ferromagnetic channels based on some Heusler and oxide compounds. Journal of Applied Physics, 123 (8). 084503. 084503. doi:10.1063/1.5011328 ISSN 1089-7550.
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Official URL: http://doi.org/10.1063/1.5011328
Abstract
Newly emerged materials from the family of Heuslers and complex oxides exhibit finite bandgaps and ferromagnetic behavior with Curie temperatures much higher than even room temperature. In this work, using the semiclassical top-of-the-barrier FET model, we explore the operation of a spin-MOSFET that utilizes such ferromagnetic semiconductors as channel materials, in addition to ferromagnetic source/drain contacts. Such a device could retain the spin polarization of injected electrons in the channel, the loss of which limits the operation of traditional spin transistors with non-ferromagnetic channels. We examine the operation of four material systems that are currently considered some of the most prominent known ferromagnetic semiconductors: three Heusler-type alloys (Mn2CoAl, CrVZrAl, and CoVZrAl) and one from the oxide family (NiFe2O4). We describe their band structures by using data from DFT (Density Functional Theory) calculations. We investigate under which conditions high spin polarization and significant ION/IOFF ratio, two essential requirements for the spin-MOSFET operation, are both achieved. We show that these particular Heusler channels, in their bulk form, do not have adequate bandgap to provide high ION/IOFF ratios and have small magnetoconductance compared to state-of-the-art devices. However, with confinement into ultra-narrow sizes down to a few nanometers, and by engineering their spin dependent contact resistances, they could prove promising channel materials for the realization of spin-MOSFET transistor devices that offer combined logic and memory functionalities. Although the main compounds of interest in this paper are Mn2CoAl, CrVZrAl, CoVZrAl, and NiFe2O4 alone, we expect that the insight we provide is relevant to other classes of such materials as well.
| Item Type: | Journal Article | |||||||||
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| Subjects: | T Technology > TK Electrical engineering. Electronics Nuclear engineering | |||||||||
| Divisions: | Faculty of Science, Engineering and Medicine > Engineering > Engineering | |||||||||
| SWORD Depositor: | Library Publications Router | |||||||||
| Library of Congress Subject Headings (LCSH): | Metal oxide semiconductor field-effect transistors, Ferromagnetism | |||||||||
| Journal or Publication Title: | Journal of Applied Physics | |||||||||
| Publisher: | AIP Publishing | |||||||||
| ISSN: | 1089-7550 | |||||||||
| Official Date: | 28 February 2018 | |||||||||
| Dates: |
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| Volume: | 123 | |||||||||
| Number: | 8 | |||||||||
| Page Range: | 084503 | |||||||||
| Article Number: | 084503 | |||||||||
| DOI: | 10.1063/1.5011328 | |||||||||
| Status: | Peer Reviewed | |||||||||
| Publication Status: | Published | |||||||||
| Reuse Statement (publisher, data, author rights): | ** From Crossref via Jisc Publications Router. | |||||||||
| Access rights to Published version: | Restricted or Subscription Access | |||||||||
| Date of first compliant deposit: | 5 March 2018 | |||||||||
| Date of first compliant Open Access: | 5 March 2018 | |||||||||
| Funder: | Italy. Progetti di Ricerca di Interesse Nazionale [Research Projects of National Interest] (PRIN) | |||||||||
| RIOXX Funder/Project Grant: |
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