Sadeghzadeh, Mohammad Ali, Horrell, A. I., Mironov, O. A., Parker, Evan H. C., Whall, Terry E. and Kearney, M. J. (2000) Wave function-dependent mobility and suppression of interface roughness scattering in a strained SiGe p-channel field-effect structure. Applied Physics Letters, Vol.76 (No.18). pp. 2568-2570. doi:10.1063/1.126410

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Abstract

The 4 K Hall mobility has been measured in a top-gated, inverted, modulation-doped Si/Si0.8Ge0.2 structure having a Si:B doping layer beneath the alloy. From comparisons with theoretical calculations, we argue that, unlike an ordinary enhancement-mode SiGe p-channel metal–oxide–semiconductor structure, this configuration leads to a decrease of interface roughness scattering with increasing sheet carrier density. We also speculate on the nature of the interface charge observed in these structures at low temperature.

Item Type:	Journal Article
Subjects:	T Technology > TK Electrical engineering. Electronics Nuclear engineering Q Science > QC Physics
Divisions:	Faculty of Science, Engineering and Medicine > Science > Physics
Library of Congress Subject Headings (LCSH):	Hall effect, Electron mobility, Semiconductors -- Junctions, Scattering (Physics), Germanium alloys, Silicon alloys
Journal or Publication Title:	Applied Physics Letters
Publisher:	American Institute of Physics
ISSN:	0003-6951
Official Date:	1 March 2000
Dates:	Date Event 1 March 2000 Published
Volume:	Vol.76
Number:	No.18
Page Range:	pp. 2568-2570
DOI:	10.1063/1.126410
Status:	Peer Reviewed
Access rights to Published version:	Open Access

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