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Wave function-dependent mobility and suppression of interface roughness scattering in a strained SiGe p-channel field-effect structure

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Sadeghzadeh, Mohammad Ali, Horrell, A. I., Mironov, O. A., Parker, Evan H. C., Whall, Terry E. and Kearney, M. J.. (2000) Wave function-dependent mobility and suppression of interface roughness scattering in a strained SiGe p-channel field-effect structure. Applied Physics Letters, Vol.76 (No.18). pp. 2568-2570. ISSN 0003-6951

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Official URL: http://dx.doi.org/10.1063/1.126410

Abstract

The 4 K Hall mobility has been measured in a top-gated, inverted, modulation-doped Si/Si0.8Ge0.2 structure having a Si:B doping layer beneath the alloy. From comparisons with theoretical calculations, we argue that, unlike an ordinary enhancement-mode SiGe p-channel metal–oxide–semiconductor structure, this configuration leads to a decrease of interface roughness scattering with increasing sheet carrier density. We also speculate on the nature of the interface charge observed in these structures at low temperature.

Item Type:

Journal Article

Subjects:

T Technology > TK Electrical engineering. Electronics Nuclear engineering
Q Science > QC Physics

Divisions:

Faculty of Science > Physics

Library of Congress Subject Headings (LCSH):

Hall effect, Electron mobility, Semiconductors -- Junctions, Scattering (Physics), Germanium alloys, Silicon alloys

Journal or Publication Title:

Applied Physics Letters

Publisher:

American Institute of Physics

ISSN:

0003-6951

Official Date:

1 March 2000

Dates:

Date	Event
1 March 2000	Published

Volume:

Vol.76

Number:

No.18

Page Range:

pp. 2568-2570

Identification Number:

10.1063/1.126410

Status:

Peer Reviewed

Access rights to Published version:

Open Access

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