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Energy loss rates of two-dimensional hole gases in inverted Si/Si0.8Ge0.2 heterostructures

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Ansaripour, Ghassem, Braithwaite, Glyn, Myranov, Maksym, Mironov, Oleg A., Parker, Evan H. C. and Whall, Terry E.. (2000) Energy loss rates of two-dimensional hole gases in inverted Si/Si0.8Ge0.2 heterostructures. Applied Physics Letters, Vol.76 (No.9). pp. 1140-1142. ISSN 0003-6951

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Official URL: http://dx.doi.org/10.1063/1.125963

Abstract

We have investigated the energy loss rate of hot holes as a function of carrier temperature TC in p-type inverted modulation-doped (MD) Si/SiGe heterostructures over the carrier sheet density range (3.5–13)×1011 cm–2, at lattice temperatures of 0.34 and 1.8 K. It is found that the energy loss rate (ELR) depends significantly upon the carrier sheet density, n2D. Such an n2D dependence of ELR has not been observed previously in p-type SiGe MD structures. The extracted effective mass decreases as n2D increases, which is in agreement with recent measurements on a gated inverted sample. It is shown that the energy relaxation of the two-dimensional hole gases is dominated by unscreened acoustic phonon scattering and a deformation potential of 3.0±0.4 eV is deduced.

Item Type:	Journal Article
Subjects:	T Technology > TK Electrical engineering. Electronics Nuclear engineering Q Science > QC Physics
Divisions:	Faculty of Science > Physics
Library of Congress Subject Headings (LCSH):	Silicon alloys, Germanium alloys, Semiconductors -- Junctions, Heterostructures, Hall effect, Electron mobility, Electron-phonon interactions
Journal or Publication Title:	Applied Physics Letters
Publisher:	American Institute of Physics
ISSN:	0003-6951
Date:	28 February 2000
Volume:	Vol.76
Number:	No.9
Page Range:	pp. 1140-1142
Identification Number:	10.1063/1.125963
Status:	Peer Reviewed
Access rights to Published version:	Open Access
Funder:	Iran. Majlis-i Shūrā-yi Islāmī [Iran. Islamic Consultative Assembly] (MSI)
References:	# B. K. Ridley, Rep. Prog. Phys. 54, 169 (1991). # S. H. Song, Wei Pan, D. C. Tsui, Y. H. Xie, and D. Monroe, Appl. Phys. Lett. 70, 3422 (1999). # G. Stöger, G. Brunthaler, G. Bauer, K. Ismail, B. S. Meyerson, J. Lutz, and F. Kuchar, Phys. Rev. B 49, 10417 (1993). # Y. H. Xie, R. People, J. C. Bean, and W. Wecht, Appl. Phys. Lett. 49, 283 (1986). # G. Braithwaite, N. L. Mattey, E. H. C. Parker, T. E. Whall, G. Brunthaler, and G. Bauer, J. Appl. Phys. 81, 6853 (1997). The calculation of the deformation potential in this paper contains an arithmetic error in the effective mass and is therefore incorrect. A recalculation gives Dac = 3.0±0.5 eV which agrees with that obtained in the present work. # (a)M. A. Sadeghzadeh, C. P. Parry, P. J. Phillips, E. H. C. Parker, and T. E. Whall, Appl. Phys. Lett. 74, 579 (1999); 6(b) Proceedings of XXVII Intern. School on Physics of Semiconducting Compounds, Jazowies (1998). # P. T. Coleridge, R. Stoner, and R. Fletcher, Phys. Rev. B 39, 1120 (1998). # K. Hirakawa and H. Sakaki, Appl. Phys. Lett. 49, 889 (1986). # J. D. Wiley, in Semiconductors and Semimetals, edited by R. K. Willardson and A. C. Beer (Academic, New York, 1975), Vol. 10, p. 91. # M. V. Fischetti and S. E. Laux, Phys. Rev. B 48, 2244 (1993). # L. J. Challis, G. A. Toombs, and F. W. Sheard, Lectures at the Karpacz Winter School on Phonon Physics, February 1987.
URI:	http://wrap.warwick.ac.uk/id/eprint/997