Sadeghzadeh, Mohammad Ali (2000) Top-gating of p-Si/SiGe/Si inverted modulation-doped structures. Applied Physics Letters, Vol.76 (No.3). pp. 348-350. doi:10.1063/1.125750 ISSN 0003-6951.

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Abstract

Low-temperature electrical properties of two-dimensional hole gases (2-DHGs) in Si/Si0.8Ge0.2/Si inverted modulation-doped structures have been investigated at different hole densities using a metal semiconductor gate sputtered on top of these structures. The 2-DHG which is supplied to the inverted interface of Si/SiGe/Si quantum well by a Si boron-doped layer spatially grown beneath the alloy, was controlled in the range of 1.5–7.8×1011 cm–2 hole density by biasing the top gate. With increasing 2-DHG sheet density, the hole wave function of these structures expands and moves away from inverted interface, consequently the mobility enhances. These results may be understood theoretically by elaborating the role of interface charge, roughness, and alloy scattering mechanisms in limiting the mobility of holes at the inverted interface.

Item Type:	Journal Article
Subjects:	T Technology > TK Electrical engineering. Electronics Nuclear engineering Q Science > QC Physics
Divisions:	Faculty of Science, Engineering and Medicine > Science > Physics
Library of Congress Subject Headings (LCSH):	Silicon alloys, Germanium alloys, Quantum wells, Hall effect, Scattering (Physics)
Journal or Publication Title:	Applied Physics Letters
Publisher:	American Institute of Physics
ISSN:	0003-6951
Official Date:	17 January 2000
Dates:	Date Event 17 January 2000 Published
Volume:	Vol.76
Number:	No.3
Page Range:	pp. 348-350
DOI:	10.1063/1.125750
Status:	Peer Reviewed
Access rights to Published version:	Open Access (Creative Commons)

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