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Top-gating of p-Si/SiGe/Si inverted modulation-doped structures

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Sadeghzadeh, Mohammad Ali. (2000) Top-gating of p-Si/SiGe/Si inverted modulation-doped structures. Applied Physics Letters, Vol.76 (No.3). pp. 348-350. ISSN 0003-6951

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Official URL: http://dx.doi.org/10.1063/1.125750

Abstract

Low-temperature electrical properties of two-dimensional hole gases (2-DHGs) in Si/Si0.8Ge0.2/Si inverted modulation-doped structures have been investigated at different hole densities using a metal semiconductor gate sputtered on top of these structures. The 2-DHG which is supplied to the inverted interface of Si/SiGe/Si quantum well by a Si boron-doped layer spatially grown beneath the alloy, was controlled in the range of 1.5–7.8×1011 cm–2 hole density by biasing the top gate. With increasing 2-DHG sheet density, the hole wave function of these structures expands and moves away from inverted interface, consequently the mobility enhances. These results may be understood theoretically by elaborating the role of interface charge, roughness, and alloy scattering mechanisms in limiting the mobility of holes at the inverted interface.

Item Type:

Journal Article

Subjects:

T Technology > TK Electrical engineering. Electronics Nuclear engineering
Q Science > QC Physics

Divisions:

Faculty of Science > Physics

Library of Congress Subject Headings (LCSH):

Silicon alloys, Germanium alloys, Quantum wells, Hall effect, Scattering (Physics)

Journal or Publication Title:

Applied Physics Letters

Publisher:

American Institute of Physics

ISSN:

0003-6951

Official Date:

17 January 2000

Dates:

Date	Event
17 January 2000	Published

Volume:

Vol.76

Number:

No.3

Page Range:

pp. 348-350

Identification Number:

10.1063/1.125750

Status:

Peer Reviewed

Access rights to Published version:

Open Access

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URI:

http://wrap.warwick.ac.uk/id/eprint/998

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