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Data for Superacid-derived surface passivation for measurement of ultra-long lifetimes in silicon photovoltaic materials

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Pointon, A. I., Grant, Nicholas E., Wheeler-Jones, Evé, Altermatt, P. P. and Murphy, John D. (2018) Data for Superacid-derived surface passivation for measurement of ultra-long lifetimes in silicon photovoltaic materials. [Dataset]

[img] Plain Text (Readme describes data in .XLSX file)
readme.txt - Supplemental Material
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[img] Microsoft Excel (Data for figures. The data behind all the graphs presented in the paper. Each worksheet within the file relates to a single figure in the paper. )
2018-03-15 Dataset for WRAP.xlsx - Published Version
Available under License Creative Commons Attribution 4.0.

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Official URL: https://wrap.warwick.ac.uk/99904/

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Abstract

Accurate measurements of bulk minority carrier lifetime are essential in order to determine the true limit of silicon's performance and to improve solar cell production processes. The thin film which forms when silicon wafers are dipped in solutions containing superacids such as bis(trifluoromethane)sulfonimide (TFSI) has recently been found to be effective at electronically passivating the silicon surface. In this paper we first study the role of the solvent in which TFSI is dissolved for the passivation process. We study ten solvents with a wide range of relative polarities, finding TFSI dissolved in hexane provides improved temporal stability, marginally better passivation and improved solution longevity compared to dichloroethane which has been used previously. Sample storage conditions, particularly humidity, can strongly influence the passivation stability. The optimised TFSI-hexane passivation scheme is then applied to a set of 3 Ω cm n-type wafers cut from the same float-zone ingot to have different thicknesses. This enables the reproducibility of the scheme to be systematically evaluated. At 1015 cm−3 injection the best case effective surface recombination velocity is 0.69 ± 0.04 cm/s, with bulk lifetimes measured up to the intrinsic lifetime limit at high injection and > 43 ms at lower injection. Immersion of silicon in superacid-based ionic solutions therefore provides excellent surface passivation, and, as it is applied at room temperature, the effects on true bulk lifetime are minimal.

Item Type: Dataset
Subjects: Q Science > QD Chemistry
T Technology > TK Electrical engineering. Electronics Nuclear engineering
Divisions: Faculty of Science, Engineering and Medicine > Engineering > Engineering
Type of Data: Experimental data
Library of Congress Subject Headings (LCSH): Passivity (Chemistry), Interfaces (Physical sciences), Solar cells -- Materials, Silicon solar cells, Superacids
Publisher: University of Warwick, School of Engineering
Official Date: 2018
Dates:
DateEvent
2018Published
14 March 2018Accepted
Status: Not Peer Reviewed
Publication Status: Published
Media of Output (format): .xlsx; .txt
Access rights to Published version: Open Access (Creative Commons)
Description:

The dataset (a single file in XLSX format) contains the data behind all the graphs presented in the paper. Each worksheet within the file relates to a single figure in the paper. Captions to the figures are given in the paper. Abbreviations, variables and methods used are defined in the paper.

Date of first compliant deposit: 19 March 2018
Date of first compliant Open Access: 19 March 2018
RIOXX Funder/Project Grant:
Project/Grant IDRIOXX Funder NameFunder ID
EP/M024911/1[EPSRC] Engineering and Physical Sciences Research Councilhttp://dx.doi.org/10.13039/501100000266
EP/N509796/1[EPSRC] Engineering and Physical Sciences Research Councilhttp://dx.doi.org/10.13039/501100000266
EP/L015307/1[EPSRC] Engineering and Physical Sciences Research Councilhttp://dx.doi.org/10.13039/501100000266
RG100076[RS] Royal Societyhttp://dx.doi.org/10.13039/501100000288
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Contributors:
ContributionNameContributor ID
DepositorMurphy, John D.55925

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