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The effect of Se and Zn pre-deposition on thermal diffusion of elements across the ZnSe/GaAs interface studied by SIMS
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UNSPECIFIED (2003) The effect of Se and Zn pre-deposition on thermal diffusion of elements across the ZnSe/GaAs interface studied by SIMS. In: 13th International Conference on Secondary Ion Mass Spectrometry and Related Topics (SIMS XIII), NARA, JAPAN, NOV 11-16, 2001. Published in: Surface Science, 203 pp. 490-494. ISSN 0169-4332.
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Abstract
ZnSe samples were grown on Zn and Se pre-deposited GaAs substrates. Thermal diffusion of elements across the ZnSe/GaAs interface was investigated, using secondary ion mass spectroscopy (SIMS). Diffusion of Ga atoms across the interface was observed for Zn pre-treated substrates, whereas Se pre-treatment of the GaAs substrate prevents thermal diffusion of Ga across the interface. This effect believed to be due to formation of GaAsxSey "barrier layers" at the ZnSe/GaAs interface. The Ga diffusion coefficients at annealing temperatures of 400, 500 and 600 degreesC were found to be 2.1 x 10(-16), 1.9 x 10(-15), and 2.2 x 10(-14) cm(2)/s, respectively. The thermal diffusion of other elements across the interface was not observed within the depth resolution limit of SIMS analysis. (C) 2002 Elsevier Science B.V. All rights reserved.
Item Type: | Conference Item (UNSPECIFIED) | ||||
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Subjects: | Q Science > QD Chemistry T Technology > TA Engineering (General). Civil engineering (General) Q Science > QC Physics |
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Journal or Publication Title: | Surface Science | ||||
Publisher: | ELSEVIER SCIENCE BV | ||||
ISSN: | 0169-4332 | ||||
Official Date: | 15 January 2003 | ||||
Dates: |
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Volume: | 203 | ||||
Number of Pages: | 5 | ||||
Page Range: | pp. 490-494 | ||||
Publication Status: | Published | ||||
Title of Event: | 13th International Conference on Secondary Ion Mass Spectrometry and Related Topics (SIMS XIII) | ||||
Location of Event: | NARA, JAPAN | ||||
Date(s) of Event: | NOV 11-16, 2001 |
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