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Ion-implantation and diffusion behaviour of boron in germanium
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UNSPECIFIED (2001) Ion-implantation and diffusion behaviour of boron in germanium. In: 21st International Conference on Defects in Semiconductors, GIESSEN, GERMANY, JUL 16-20, 2001. Published in: PHYSICA B-CONDENSED MATTER, 308 pp. 525-528. ISSN 0921-4526.
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Abstract
Results are presented of implantation and diffusion study of boron (B) in germanium (Ge). B implantation was carried out in Ge with different energies and to different doses. High-resolution secondary ion mass spectroscopy was used to obtain concentration profiles after furnace annealing. The as-implanted profiles show a long tail possibly due to enhanced diffusion. A limited diffusion has been observed after furnace annealing. Using T-SUPREM, diffusivity value of 1.5(+/-0.3) x 10(-16) cm(2)/s at 850degreesC has been extracted. This value is two orders of magnitude lower than previously reported values. The results question the change in diffusion mechanism of B diffusion in Si-Ge alloys from low Ge levels to high Ge levels. (C) 2001 Elsevier Science B.V. All rights reserved.
Item Type: | Conference Item (UNSPECIFIED) | ||||
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Subjects: | Q Science > QC Physics | ||||
Journal or Publication Title: | PHYSICA B-CONDENSED MATTER | ||||
Publisher: | ELSEVIER SCIENCE BV | ||||
ISSN: | 0921-4526 | ||||
Official Date: | December 2001 | ||||
Dates: |
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Volume: | 308 | ||||
Number of Pages: | 4 | ||||
Page Range: | pp. 525-528 | ||||
Publication Status: | Published | ||||
Title of Event: | 21st International Conference on Defects in Semiconductors | ||||
Location of Event: | GIESSEN, GERMANY | ||||
Date(s) of Event: | JUL 16-20, 2001 |
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