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Two dimensional phonon-drag thermopower in Si0.87Ge0.13/Si (001) heterostructure grown by MBE
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UNSPECIFIED (2000) Two dimensional phonon-drag thermopower in Si0.87Ge0.13/Si (001) heterostructure grown by MBE. In: 3rd International Conference on Low Dimensional Structures and Devices (LDSD 99), ANTALYA, TURKEY, SEP 15-17, 1999. Published in: MICROELECTRONIC ENGINEERING, 51-2 pp. 527-534. ISSN 0167-9317.
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Abstract
Results of thermoelectric power measurements are presented for two dimensional hole gas (2DHG) formed at the normal interface of modulation boron doped Si/Si0.87Ge0.13 /(001) Si fully strained heterostructure for the first time in the temperature range 1.5 to 25 K. The modulation-doped 2DHG sample has carrier sheet density p(s) of 2 x 10(11) cm(-2) and its mobility value mu is 1.11 x 10(4) cm(2) V-1 s(-1) at liquid He-4 temperature. The thermoelectric power is found to be dominated by the phonon drag contribution. A fit to phonon-drag thermopower theory yields a value of 5.5 eV for the screened acoustic phonon deformation potential. A Kohn anomaly is observed at similar to 3.5+/-0.5 K. (C) 2000 Elsevier Science B.V. All rights reserved.
Item Type: | Conference Item (UNSPECIFIED) | ||||
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Subjects: | T Technology > TK Electrical engineering. Electronics Nuclear engineering T Technology Q Science > QC Physics |
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Journal or Publication Title: | MICROELECTRONIC ENGINEERING | ||||
Publisher: | ELSEVIER SCIENCE BV | ||||
ISSN: | 0167-9317 | ||||
Official Date: | May 2000 | ||||
Dates: |
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Volume: | 51-2 | ||||
Number of Pages: | 8 | ||||
Page Range: | pp. 527-534 | ||||
Publication Status: | Published | ||||
Title of Event: | 3rd International Conference on Low Dimensional Structures and Devices (LDSD 99) | ||||
Location of Event: | ANTALYA, TURKEY | ||||
Date(s) of Event: | SEP 15-17, 1999 |
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