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SiGe CMOS fabrication using SiGe MBE and anodic/LTO gate oxide (vol 15, pg 135, 2000)
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UNSPECIFIED (2000) SiGe CMOS fabrication using SiGe MBE and anodic/LTO gate oxide (vol 15, pg 135, 2000). SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 15 (4). p. 423.
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Item Type: | Journal Item | ||||
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Subjects: | T Technology > TK Electrical engineering. Electronics Nuclear engineering T Technology > TA Engineering (General). Civil engineering (General) Q Science > QC Physics |
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Journal or Publication Title: | SEMICONDUCTOR SCIENCE AND TECHNOLOGY | ||||
Publisher: | IOP PUBLISHING LTD | ||||
ISSN: | 0268-1242 | ||||
Official Date: | April 2000 | ||||
Dates: |
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Volume: | 15 | ||||
Number: | 4 | ||||
Number of Pages: | 1 | ||||
Page Range: | p. 423 | ||||
Publication Status: | Published |
Data sourced from Thomson Reuters' Web of Knowledge
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