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SiGe heterostructure CMOS circuits and applications
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UNSPECIFIED (1999) SiGe heterostructure CMOS circuits and applications. In: Topical Workshop on Heterostructure Microelectronics, HAYAMA MACHI, JAPAN, AUG 30-SEP 02, 1998. Published in: SOLID-STATE ELECTRONICS, 43 (8). pp. 1497-1506. ISSN 0038-1101.
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Abstract
A review is given of the 300 K electron and hole mobilities in Si/SeGe heterostructures and the potential applications of these materials in CMOS technology. Prospects for further enhancements in carrier mobility and CMOS process design options are discussed for Si/SiGe strained layers on Si and on relaxed SiGe 'virtual substrates'. Recent work on heterointerface quality, limited area growth of virtual substrates, carrier mobility and velocity-field characteristics is also reported. (C) 1999 Elsevier Science Ltd. All rights reserved.
Item Type: | Conference Item (UNSPECIFIED) | ||||
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Subjects: | T Technology > TK Electrical engineering. Electronics Nuclear engineering Q Science > QC Physics |
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Journal or Publication Title: | SOLID-STATE ELECTRONICS | ||||
Publisher: | PERGAMON-ELSEVIER SCIENCE LTD | ||||
ISSN: | 0038-1101 | ||||
Official Date: | August 1999 | ||||
Dates: |
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Volume: | 43 | ||||
Number: | 8 | ||||
Number of Pages: | 10 | ||||
Page Range: | pp. 1497-1506 | ||||
Publication Status: | Published | ||||
Title of Event: | Topical Workshop on Heterostructure Microelectronics | ||||
Location of Event: | HAYAMA MACHI, JAPAN | ||||
Date(s) of Event: | AUG 30-SEP 02, 1998 |
Data sourced from Thomson Reuters' Web of Knowledge
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