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SiGe p-channel MOSFETs with tungsten gate
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UNSPECIFIED (1999) SiGe p-channel MOSFETs with tungsten gate. ELECTRONICS LETTERS, 35 (5). pp. 430-431. ISSN 0013-5194.
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Abstract
A self-aligned SiGe p-channel MOSFET tungsten gate process with 0.1 mu m resolution is demonstrated. Interface charge densities of MOS capacitors realised with the low pressure sputtered tungsten process are comparable with thermally evaporated aluminium gale technologies (5 X 10(10)cm(-2) and 2 X 10(11)cm(-2) for W and Al, respectively). Initial results from 1 mu m gate length SiGe p-channel MOSFETs using the tungsten-based process show devices with a transconductance of 33mS/mm and effective channel mobility of 190cm(2)/Vs.
Item Type: | Journal Article | ||||
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Subjects: | T Technology > TK Electrical engineering. Electronics Nuclear engineering | ||||
Journal or Publication Title: | ELECTRONICS LETTERS | ||||
Publisher: | IEE-INST ELEC ENG | ||||
ISSN: | 0013-5194 | ||||
Official Date: | 4 March 1999 | ||||
Dates: |
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Volume: | 35 | ||||
Number: | 5 | ||||
Number of Pages: | 2 | ||||
Page Range: | pp. 430-431 | ||||
Publication Status: | Published |
Data sourced from Thomson Reuters' Web of Knowledge
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