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SiGe heterostructures for FET applications
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UNSPECIFIED (1998) SiGe heterostructures for FET applications. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 31 (12). pp. 1397-1416.
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Abstract
The high room-temperature carrier mobilities which have recently been observed for both electrons and holes in Si/SiGe heterostructures and the possibility of further improvements offer the prospect of silicon-based field effect transistors (FETs) with performances matching those of bipolar transistors and ill-V modulation-doped FETs. In this article the electrical properties of this semiconductor system and the associated materials challenges are discussed, and some of the more important device applications are reviewed.
Item Type: | Journal Item | ||||
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Subjects: | Q Science > QC Physics | ||||
Journal or Publication Title: | JOURNAL OF PHYSICS D-APPLIED PHYSICS | ||||
Publisher: | IOP PUBLISHING LTD | ||||
ISSN: | 0022-3727 | ||||
Official Date: | 21 June 1998 | ||||
Dates: |
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Volume: | 31 | ||||
Number: | 12 | ||||
Number of Pages: | 20 | ||||
Page Range: | pp. 1397-1416 | ||||
Publication Status: | Published |
Data sourced from Thomson Reuters' Web of Knowledge
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