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Thermoelectric and hot-electron properties of a silicon inversion layer
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UNSPECIFIED (1997) Thermoelectric and hot-electron properties of a silicon inversion layer. PHYSICAL REVIEW B, 56 (19). pp. 12422-12428. ISSN 0163-1829.
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Abstract
Electron-phonon coupling of a two-dimensional electron gas in a Si metal-oxide-semiconductor field-effect transistor in the temperature range 0.3 K < T < 4 K has been investigated using phonon-drag thermopower S-g and electron energy loss rate F(T). At low temperatures (the Bloch limit) we find S-g proportional to T-6, as expected for electron-phonon scattering mediated by a screened deformation potential, and the magnitude is in excellent agreement with a calculation using no adjustable parameters; the calculation continues to give good agreement at higher temperatures. F(T) has been calculated using the same input parameters as for S-g. Reasonably good agreement is found with the observed values for T>1.5 K, but at lower temperatures the measured F(T) is much larger than predicted and also exhibits a much weaker temperature dependence. Possible reasons are suggested.
Item Type: | Journal Article | ||||
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Subjects: | Q Science > QC Physics | ||||
Journal or Publication Title: | PHYSICAL REVIEW B | ||||
Publisher: | AMERICAN PHYSICAL SOC | ||||
ISSN: | 0163-1829 | ||||
Official Date: | 15 November 1997 | ||||
Dates: |
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Volume: | 56 | ||||
Number: | 19 | ||||
Number of Pages: | 7 | ||||
Page Range: | pp. 12422-12428 | ||||
Publication Status: | Published |
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