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Screening phenomena in Si/Si1-xGex quantum wells
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UNSPECIFIED (1997) Screening phenomena in Si/Si1-xGex quantum wells. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 12 (10). pp. 1231-1234. ISSN 0268-1242.
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Abstract
The electrical conductivity of the 2DHG formed at the Si/Si1-xGex interface has been measured on samples with composition 0.05 < x < 0.29 and carrier sheet densities between 1 x 10(11) cm(-2) and 1.1 x 10(12) cm(-2) in the temperature range 0.3 K to 1.6 K. It is found that the temperature (T) dependence is described by the superposition of a screening term linear in T and a logarithmic term associated with weak localization and carrier-carrier interactions. We find no evidence for a screening term with a T-2 dependence as has been predicted as a consequence of lifetime broadening. The results are in satisfactory quantitative agreement with Gold and Dolgopolov's theory of screening of short-range scattering centres.
Item Type: | Journal Article | ||||
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Subjects: | T Technology > TK Electrical engineering. Electronics Nuclear engineering T Technology > TA Engineering (General). Civil engineering (General) Q Science > QC Physics |
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Journal or Publication Title: | SEMICONDUCTOR SCIENCE AND TECHNOLOGY | ||||
Publisher: | IOP PUBLISHING LTD | ||||
ISSN: | 0268-1242 | ||||
Official Date: | October 1997 | ||||
Dates: |
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Volume: | 12 | ||||
Number: | 10 | ||||
Number of Pages: | 4 | ||||
Page Range: | pp. 1231-1234 | ||||
Publication Status: | Published |
Data sourced from Thomson Reuters' Web of Knowledge
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