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Optical study of MBE grown undoped Si-Si1-xGex/Si superlattices
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UNSPECIFIED (1996) Optical study of MBE grown undoped Si-Si1-xGex/Si superlattices. In: XXV International School on Physics of Semiconducting Compounds, JASZOWIEC, POLAND, MAY 27-31, 1996. Published in: ACTA PHYSICA POLONICA A, 90 (5). pp. 1045-1049. ISSN 0587-4246.
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Abstract
Raman spectroscopy and spectroscopic ellipsometry have been used to characterize Si/Si-0.78 Ge-0.22 superlattices grown by molecular beam epitaxy on (001)Si at different substrate temperatures. The results are interpreted to give information on material and interface quality, layer thicknesses, and state of strain. The observed frequencies of zone-folded longitudinal acoustic phonons in a high quality sample agree well with those calculated using Rytov's theory of acoustic vibrations in layered media.
Item Type: | Conference Item (UNSPECIFIED) | ||||
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Subjects: | Q Science > QC Physics | ||||
Journal or Publication Title: | ACTA PHYSICA POLONICA A | ||||
Publisher: | POLISH ACAD SCIENCES INST PHYSICS | ||||
ISSN: | 0587-4246 | ||||
Official Date: | November 1996 | ||||
Dates: |
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Volume: | 90 | ||||
Number: | 5 | ||||
Number of Pages: | 5 | ||||
Page Range: | pp. 1045-1049 | ||||
Publication Status: | Published | ||||
Title of Event: | XXV International School on Physics of Semiconducting Compounds | ||||
Location of Event: | JASZOWIEC, POLAND | ||||
Date(s) of Event: | MAY 27-31, 1996 |
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