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Low temperature electron transport in Si with an MBE grown delta<Sb>-layer
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UNSPECIFIED (1996) Low temperature electron transport in Si with an MBE grown delta<Sb>-layer. In: 21st International Conference on Low Temperature Physics (LT 21), PRAGUE, CZECH REPUBLIC, AUG 08-14, 1996. Published in: CZECHOSLOVAK JOURNAL OF PHYSICS, 46 (Suppl. 5). pp. 2479-2480. ISSN 0011-4626.
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Abstract
The temperature alteration of the kinetic electron characteristics (conductivity, Hall coefficient, magnetic field dependences of resistivity) of Si crystals containing gamma < Sb >-layers with various Sb atom concentrations N-Sb has been studied in the range 1.6-300 K. It was revealed that at low temperatures the properties of such a system are specified by the delta-layer itself. The temperature dependence of the electronic characteristics of low resistance samples (N-Sb = (1 divided by 3). 10(14) cm(-2)) is due to quantum interference effects (effects of electron weak localization (WL) and electron-electron interaction (EEI)) in the two-dimensional system, and those of high resistance (N-Sb = (5 divided by 10). 10(12) cm(-2)) to hopping conductivity mechanisms. In the higher temperature range their behaviour is described by the properties of the doped semiconductor.
Item Type: | Conference Item (UNSPECIFIED) | ||||
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Subjects: | Q Science > QC Physics | ||||
Journal or Publication Title: | CZECHOSLOVAK JOURNAL OF PHYSICS | ||||
Publisher: | CZECHOSLOVAK JNL OF PHYSICS | ||||
ISSN: | 0011-4626 | ||||
Official Date: | 1996 | ||||
Dates: |
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Volume: | 46 | ||||
Number: | Suppl. 5 | ||||
Number of Pages: | 2 | ||||
Page Range: | pp. 2479-2480 | ||||
Publication Status: | Published | ||||
Title of Event: | 21st International Conference on Low Temperature Physics (LT 21) | ||||
Location of Event: | PRAGUE, CZECH REPUBLIC | ||||
Date(s) of Event: | AUG 08-14, 1996 |
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