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COTUNNELING OF HOLES IN SILICON-BASED STRUCTURES
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UNSPECIFIED (1994) COTUNNELING OF HOLES IN SILICON-BASED STRUCTURES. PHYSICAL REVIEW B, 49 (23). pp. 16514-16517. ISSN 0163-1829.
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Abstract
Inelastic cotunneling of holes through double-tunnel-junction systems fabricated in delta-doped silicon-germanium layers was studied for bias voltages below the Coulomb blockade threshold. The inelastic, linear, finite-temperature cotunneling term dominates for lower voltages while the zero-temperature, cubic cotunneling term dominates for higher voltages below the Coulomb blockade threshold for temperatures above 4.2 K.
Item Type: | Journal Article | ||||
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Subjects: | Q Science > QC Physics | ||||
Journal or Publication Title: | PHYSICAL REVIEW B | ||||
Publisher: | AMERICAN PHYSICAL SOC | ||||
ISSN: | 0163-1829 | ||||
Official Date: | 15 June 1994 | ||||
Dates: |
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Volume: | 49 | ||||
Number: | 23 | ||||
Number of Pages: | 4 | ||||
Page Range: | pp. 16514-16517 | ||||
Publication Status: | Published |
Data sourced from Thomson Reuters' Web of Knowledge
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