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OPTICAL-PROPERTIES OF SI/SI0.87GE0.13 MULTIPLE-QUANTUM-WELL WIRES
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UNSPECIFIED (1993) OPTICAL-PROPERTIES OF SI/SI0.87GE0.13 MULTIPLE-QUANTUM-WELL WIRES. APPLIED PHYSICS LETTERS, 63 (4). pp. 497-499. ISSN 0003-6951.
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Abstract
Nanometer-scale wires cut into a Si/Si0.87Ge0.13 multiple quantum well structure were fabricated and characterized by using photoluminescence and photoreflectance at temperatures between 4 and 20 K. It was found that, in addition to a low-energy broadband emission at around 0.8 eV and other features normally observable in photoluminescence measurements, fabrication process induced strain relaxation and enhanced electron-hole droplets emission together with a new feature at 1. 131 eV at 4 K were observed. The latter was further identified as a transition related to impurities located at the Si/Si0.87Ge0.13 heterointerfaces.
Item Type: | Journal Article | ||||
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Subjects: | Q Science > QC Physics | ||||
Journal or Publication Title: | APPLIED PHYSICS LETTERS | ||||
Publisher: | AMER INST PHYSICS | ||||
ISSN: | 0003-6951 | ||||
Official Date: | 26 July 1993 | ||||
Dates: |
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Volume: | 63 | ||||
Number: | 4 | ||||
Number of Pages: | 3 | ||||
Page Range: | pp. 497-499 | ||||
Publication Status: | Published |
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