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HIGH HOLE MOBILITIES IN A P-TYPE MODULATION-DOPED SI/SI0.87GE0.13/SI HETEROSTRUCTURE
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UNSPECIFIED (1993) HIGH HOLE MOBILITIES IN A P-TYPE MODULATION-DOPED SI/SI0.87GE0.13/SI HETEROSTRUCTURE. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 8 (4). pp. 615-616.
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Abstract
We report the highest 4 K hole mobility (9300 cm2 V-1 s-1) observed so far in a Si/SiGe/Si heterostructure. It is tentatively concluded that this improvement over previous results is due to a reduction in interface charge, and that the mobility is now limited by interface roughness scattering.
Item Type: | Journal Item | ||||
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Subjects: | T Technology > TK Electrical engineering. Electronics Nuclear engineering T Technology > TA Engineering (General). Civil engineering (General) Q Science > QC Physics |
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Journal or Publication Title: | SEMICONDUCTOR SCIENCE AND TECHNOLOGY | ||||
Publisher: | IOP PUBLISHING LTD | ||||
ISSN: | 0268-1242 | ||||
Official Date: | April 1993 | ||||
Dates: |
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Volume: | 8 | ||||
Number: | 4 | ||||
Number of Pages: | 2 | ||||
Page Range: | pp. 615-616 | ||||
Publication Status: | Published |
Data sourced from Thomson Reuters' Web of Knowledge
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