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OPTICAL-PROPERTIES OF SI/SI1-XGEX HETEROSTRUCTURE BASED WIRES
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UNSPECIFIED (1993) OPTICAL-PROPERTIES OF SI/SI1-XGEX HETEROSTRUCTURE BASED WIRES. SOLID STATE COMMUNICATIONS, 85 (3). pp. 199-202. ISSN 0038-1098.
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Abstract
We report for the first time a study of the optical properties of nanostructured wires fabricated by using electron beam lithography and reactive ion etching in SiCl4 from a modulation doped p+-Si/Si1-xGex heterojunction structure. Both photoreflectance and photoluminescence at 4K show a fabrication process-induced partial strain relaxation and a quasi-one dimensional (1D) behavior when the wire width.reduces to less than about 40nm. A strong emission from electron-hole droplets in the quasi-1D wires is also detected.
Item Type: | Journal Article | ||||
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Subjects: | Q Science > QC Physics | ||||
Journal or Publication Title: | SOLID STATE COMMUNICATIONS | ||||
Publisher: | PERGAMON-ELSEVIER SCIENCE LTD | ||||
ISSN: | 0038-1098 | ||||
Official Date: | January 1993 | ||||
Dates: |
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Volume: | 85 | ||||
Number: | 3 | ||||
Number of Pages: | 4 | ||||
Page Range: | pp. 199-202 | ||||
Publication Status: | Published |
Data sourced from Thomson Reuters' Web of Knowledge
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