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HOLE TRANSPORT IN SI0.8GE0.2 QUANTUM-WELLS AT LOW-TEMPERATURES
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UNSPECIFIED (1992) HOLE TRANSPORT IN SI0.8GE0.2 QUANTUM-WELLS AT LOW-TEMPERATURES. In: SYMP ON SIGE BASED TECHNOLOGIES, AT THE 1992 SPRING CONF OF THE EUROPEAN MATERIALS RESEARCH SOC, STRASBOURG, FRANCE, JUN 02-04, 1992. Published in: THIN SOLID FILMS, 222 (1-2). pp. 24-26. ISSN 0040-6090.
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Abstract
The temperature dependence of the resistivity and the Hall coefficient of two-dimensional hole gases in the range 0.3-20 K has been investigated experimentally. The samples used in this study, grown by MBE, were Si/Si0.8Ge0.2 single heterojunctions, modulation doped with boron. Carrier mobilities at 5 K are in the range 2000-3750 cm2 V-1 s-1, depending on growth conditions. From the results, which suggest the presence of weak localisation and hole-hole interaction effects as well as a temperature dependence of the Boltzmann conductivity, it is deduced that charged interface states are the most important scattering centres, in agreement with previous work.
Item Type: | Conference Item (UNSPECIFIED) | ||||
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Subjects: | T Technology > TA Engineering (General). Civil engineering (General) Q Science > QC Physics |
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Journal or Publication Title: | THIN SOLID FILMS | ||||
Publisher: | ELSEVIER SCIENCE SA LAUSANNE | ||||
ISSN: | 0040-6090 | ||||
Official Date: | 20 December 1992 | ||||
Dates: |
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Volume: | 222 | ||||
Number: | 1-2 | ||||
Number of Pages: | 3 | ||||
Page Range: | pp. 24-26 | ||||
Publication Status: | Published | ||||
Title of Event: | SYMP ON SIGE BASED TECHNOLOGIES, AT THE 1992 SPRING CONF OF THE EUROPEAN MATERIALS RESEARCH SOC | ||||
Location of Event: | STRASBOURG, FRANCE | ||||
Date(s) of Event: | JUN 02-04, 1992 |
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