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WEAK LOCALIZATION AND HOLE HOLE INTERACTION EFFECTS IN SILICON BORON DELTA LAYERS
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UNSPECIFIED (1992) WEAK LOCALIZATION AND HOLE HOLE INTERACTION EFFECTS IN SILICON BORON DELTA LAYERS. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 7 (4). pp. 604-607.
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Abstract
Measurements of sheet resistance and Hall coefficient between 0.3 K and 30 K have been used to infer two-dimensional weak localization and hole-hole interaction effects in Si: B delta-doped layers. It is found that the renormalized screening parameter in the interaction theory F* approximately 0.9 for samples of sheet concentrations 1.8 x 10(13) cm-2 to 7.6 x 10(13) cm-2 and is only weakly dependent on carrier concentration, in agreement with theory. The weak localization correction provides evidence for spin-orbit scattering, which appears to become increasingly important as the sheet concentration is increased.
Item Type: | Journal Item | ||||
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Subjects: | T Technology > TK Electrical engineering. Electronics Nuclear engineering T Technology > TA Engineering (General). Civil engineering (General) Q Science > QC Physics |
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Journal or Publication Title: | SEMICONDUCTOR SCIENCE AND TECHNOLOGY | ||||
Publisher: | IOP PUBLISHING LTD | ||||
ISSN: | 0268-1242 | ||||
Official Date: | April 1992 | ||||
Dates: |
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Volume: | 7 | ||||
Number: | 4 | ||||
Number of Pages: | 4 | ||||
Page Range: | pp. 604-607 | ||||
Publication Status: | Published |
Data sourced from Thomson Reuters' Web of Knowledge
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