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GERMANIUM CONCENTRATION PROFILING OF SI/GEXSI1-X HETEROSTRUCTURES BY ANODIC-DISSOLUTION
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UNSPECIFIED (1991) GERMANIUM CONCENTRATION PROFILING OF SI/GEXSI1-X HETEROSTRUCTURES BY ANODIC-DISSOLUTION. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 6 (12). pp. 1175-1177.
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Abstract
Comparison between the variation in anodic dissolution current during etching of p-type and undoped Si/GexSi1-x (x less-than-or-equal-to 0.24) structures and Ge composition profiles indicates a correlation between the change in etch current and Ge content. The optimal choice of electrolyte and etching conditions is reported. These preliminary results indicate that the Ge content can be determined from the etch current profile with an accuracy of +/- 15% in x at a depth resolution of 10 nm. This technique represents a simple, rapid method of Ge profiling through arbitray-composition structures.
Item Type: | Journal Item | ||||
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Subjects: | T Technology > TK Electrical engineering. Electronics Nuclear engineering T Technology > TA Engineering (General). Civil engineering (General) Q Science > QC Physics |
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Journal or Publication Title: | SEMICONDUCTOR SCIENCE AND TECHNOLOGY | ||||
Publisher: | IOP PUBLISHING LTD | ||||
ISSN: | 0268-1242 | ||||
Official Date: | December 1991 | ||||
Dates: |
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Volume: | 6 | ||||
Number: | 12 | ||||
Number of Pages: | 3 | ||||
Page Range: | pp. 1175-1177 | ||||
Publication Status: | Published |
Data sourced from Thomson Reuters' Web of Knowledge
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