The Library
IMPROVED FLUX CONTROL FROM THE SENTINEL III ELECTRON-IMPACT EMISSION-SPECTROSCOPY SYSTEM
Tools
UNSPECIFIED (1991) IMPROVED FLUX CONTROL FROM THE SENTINEL III ELECTRON-IMPACT EMISSION-SPECTROSCOPY SYSTEM. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 9 (4). pp. 2423-2425.
Research output not available from this repository.
Request-a-Copy directly from author or use local Library Get it For Me service.
Abstract
Measures taken to improve the sensitivity and stability of the Sentinel III electron impact emission spectroscopy evaporation controller are described, allowing calibration factors of up to 50 times to be used. Si and Ge deposition rates from 0.3 nm s-1 down to 0.004 and 0.001 nm s-1, respectively, have been achieved, with stable control over growth periods of many hours. Use of these low deposition rates allows access to low SiGe alloy compositions and eliminates the occurrence of alloy fluctuations due to flux noise and finite substrate rotation speeds, by allowing monolayer deposition times of several seconds to be used. A marked nonlinearity in response of the Sentinel sensor to Si flux is also described.
Item Type: | Journal Item | ||||
---|---|---|---|---|---|
Subjects: | T Technology > TA Engineering (General). Civil engineering (General) Q Science > QC Physics |
||||
Journal or Publication Title: | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | ||||
Publisher: | AMER INST PHYSICS | ||||
ISSN: | 0734-2101 | ||||
Official Date: | July 1991 | ||||
Dates: |
|
||||
Volume: | 9 | ||||
Number: | 4 | ||||
Number of Pages: | 3 | ||||
Page Range: | pp. 2423-2425 | ||||
Publication Status: | Published |
Data sourced from Thomson Reuters' Web of Knowledge
Request changes or add full text files to a record
Repository staff actions (login required)
View Item |