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FORMATION OF BURIED SIO2 LAYER BY OXYGEN IMPLANTED INTO SI/GE AND SI SI0.5GE0.5 SUBSTRATES
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UNSPECIFIED (1990) FORMATION OF BURIED SIO2 LAYER BY OXYGEN IMPLANTED INTO SI/GE AND SI SI0.5GE0.5 SUBSTRATES. JOURNAL OF APPLIED PHYSICS, 67 (11). pp. 7151-7153.
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Item Type: | Journal Item | ||||
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Subjects: | Q Science > QC Physics | ||||
Journal or Publication Title: | JOURNAL OF APPLIED PHYSICS | ||||
Publisher: | AMER INST PHYSICS | ||||
ISSN: | 0021-8979 | ||||
Official Date: | 1 June 1990 | ||||
Dates: |
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Volume: | 67 | ||||
Number: | 11 | ||||
Number of Pages: | 3 | ||||
Page Range: | pp. 7151-7153 | ||||
Publication Status: | Published |
Data sourced from Thomson Reuters' Web of Knowledge
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