The Library
Growth and characterisation of terrace graded virtual substrates with Si[subscript 1-x]Ge[subscript x] 0.15 ≤ x ≤ 1.
Tools
Nash, Lee John (2005) Growth and characterisation of terrace graded virtual substrates with Si[subscript 1-x]Ge[subscript x] 0.15 ≤ x ≤ 1. PhD thesis, University of Warwick.
PDF
WRAP_THESIS_Nash_2005.pdf - Requires a PDF viewer. Download (5Mb) |
Official URL: http://www2.warwick.ac.uk/fac/sci/physics/research...
Abstract
Growth of terrace graded virtual substrates, pioneered by Capewell (2002), has been conducted utilising solid-source molecular beam epitaxy (SS-MBE) to produce structures of higher germanium composition (up to pure germanium) and greater thickness (up to 20 μm) than previously investigated. Terrace grading offers a number of advantages over more conventional grading techniques which include the reduction of surface threading dislocation density, reduction of surface roughness and the possibility of the complete elimination of threading dislocation pile-up. The closely spaced pile-up of threading dislocations is believed to have a significant impact on the electrical properties of processed devices, and its elimination is a key goal in this work.
Numerous terrace graded virtual substrate compositions have been grown and characterised during the course of this work and, where appropriate, comparison made with more conventional structures. The complete elimination of threading dislocation pile-up has been demonstrated at compositions of 30% and 40%, with a reduced threading dislocation density in comparison to equivalent liner graded structures. A major reduction in threading dislocation density has been accomplished though post growth ex-situ annealing at 900°c for an extend period of time, though the exact mechanism remains uncertain. The possible role of surface precipitates enabling reduction of dislocation pile-up and/or density is considered along with the effects of unwanted particulate contamination during growth.
Item Type: | Thesis (PhD) | ||||
---|---|---|---|---|---|
Subjects: | T Technology > TK Electrical engineering. Electronics Nuclear engineering Q Science > QC Physics |
||||
Library of Congress Subject Headings (LCSH): | Silicon compounds, Germanium compounds, Molecular beam epitaxy, Surfaces (Physics), Dislocations in metals | ||||
Official Date: | September 2005 | ||||
Dates: |
|
||||
Institution: | University of Warwick | ||||
Theses Department: | Department of Physics | ||||
Thesis Type: | PhD | ||||
Publication Status: | Unpublished | ||||
Supervisor(s)/Advisor: | Parker, Evan H. C. ; Grasby, T. J. | ||||
Format of File: | |||||
Extent: | 232 leaves : charts | ||||
Language: | eng |
Request changes or add full text files to a record
Repository staff actions (login required)
View Item |
Downloads
Downloads per month over past year