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Hole effective mass in silicon inversion layers with different substrate orientations and channel directions
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Donetti, L., Gámiz, F., Thomas, S., Whall, Terry E., Leadley, D. R. (David R.), Hellström, P.-E., Malm, G. and Östling, Mikael (2011) Hole effective mass in silicon inversion layers with different substrate orientations and channel directions. Journal of Applied Physics, Vol.110 (No.6). doi:10.1063/1.3639281 ISSN 0021-8979.
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Official URL: http://dx.doi.org/10.1063/1.3639281
Abstract
We explore the possibility to define an effective mass parameter to describe hole transport in inversion layers in bulk MOSFETs and silicon-on-insulator devices. To do so, we employ an accurate and computationally efficient self-consistent simulator based on the six-band k·p model. The valence band structure is computed for different substrate orientations and silicon layer thicknesses and is then characterized through the calculation of different effective masses taking account of the channel direction. The effective masses for quantization and density of states are extracted from the computed energy levels and subband populations, respectively. For the transport mass, a weighted averaging procedure is introduced and justified by comparing the results with hole mobility from experiments and simulations.
Item Type: | Journal Article | ||||
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Subjects: | Q Science > QC Physics | ||||
Divisions: | Faculty of Science, Engineering and Medicine > Science > Physics | ||||
Library of Congress Subject Headings (LCSH): | Metal oxide semiconductor field-effect transistors -- Mathematical models | ||||
Journal or Publication Title: | Journal of Applied Physics | ||||
Publisher: | American Institute of Physics | ||||
ISSN: | 0021-8979 | ||||
Official Date: | 23 September 2011 | ||||
Dates: |
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Volume: | Vol.110 | ||||
Number: | No.6 | ||||
Number of Pages: | 8 | ||||
DOI: | 10.1063/1.3639281 | ||||
Status: | Peer Reviewed | ||||
Access rights to Published version: | Restricted or Subscription Access | ||||
Date of first compliant deposit: | 17 December 2015 | ||||
Date of first compliant Open Access: | 17 December 2015 | ||||
Funder: | Seventh Framework Programme (European Commission) (FP7), Spain. Ministerio de Ciencia e Innovación (MICINN) | ||||
Grant number: | FP7-CA-216373 (FP7), FP7 IST-216171 (FP7), TEC2008-06758-C02-01 (MICINN), FIS2008-05805 (MICINN), TIC-P06-1899 (MICINN) |
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