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Self-diffusion in compressively strained Ge
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Kawamura, Y., Uematsu, M., Hoshi, Y., Sawano, K., Myronov, Maksym, Shiraki, Y., Haller, E. and Itoh, K. H. (2011) Self-diffusion in compressively strained Ge. Journal of Applied Physics, Vol.110 (No.3). Article 034906 . doi:10.1063/1.3608171 ISSN 0021-8979.
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Official URL: http://dx.doi.org/10.1063/1.3608171
Abstract
Under a compressive biaxial strain of similar to 0.71%, Ge self-diffusion has been measured using an isotopically controlled Ge single-crystal layer grown on a relaxed Si(0.2)Ge(0.8) virtual substrate. The self-diffusivity is enhanced by the compressive strain and its behavior is fully consistent with a theoretical prediction of a generalized activation volume model of a simple vacancy mediated diffusion, reported by Aziz et al. [Phys. Rev. B 73, 054101 (2006)]. The activation volume of (-0.65 +/- 0.21) times the Ge atomic volume quantitatively describes the observed enhancement due to the compressive biaxial strain very well.
Item Type: | Journal Article | ||||
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Subjects: | Q Science > QC Physics Q Science > QD Chemistry T Technology > TA Engineering (General). Civil engineering (General) |
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Divisions: | Faculty of Science, Engineering and Medicine > Science > Physics | ||||
Library of Congress Subject Headings (LCSH): | Germanium, Diffusion, Silicon, Materials -- Compression testing | ||||
Journal or Publication Title: | Journal of Applied Physics | ||||
Publisher: | American Institute of Physics | ||||
ISSN: | 0021-8979 | ||||
Official Date: | 1 August 2011 | ||||
Dates: |
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Volume: | Vol.110 | ||||
Number: | No.3 | ||||
Page Range: | Article 034906 | ||||
DOI: | 10.1063/1.3608171 | ||||
Status: | Peer Reviewed | ||||
Publication Status: | Published |
Data sourced from Thomson Reuters' Web of Knowledge
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