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Defect-related excess low-frequency noise in Ge-on-Si pMOSFETs
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Simoen, E. (Eddy), Mitard, J., De Jaeger, B., Eneman, G., Dobbie, A. (Andrew), Myronov, Maksym, Leadley, D. R. (David R.), Meuris, Marc, Hoffmann, T. and Claeys, C. (2011) Defect-related excess low-frequency noise in Ge-on-Si pMOSFETs. IEEE Electron Device Letters, Vol.32 (No.1). pp. 87-89. doi:10.1109/LED.2010.2089968 ISSN 0741-3106.
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Official URL: http://dx.doi.org/10.1109/LED.2010.2089968
Abstract
The low-frequency noise in strained and relaxed Ge pMOSFETs is characterized to investigate more closely the anomalously large current spectral density at low drain currents. As shown, the dominant Lorentzian spectrum found in weak inversion points to fluctuations by generation-recombination (GR) events at substrate defects. This is confirmed by the fact that strained Ge transistors, having a significantly lower threading dislocation density, also exhibit lower excess GR noise. The usual number-fluctuation 1/f noise becomes more pronounced above threshold and also for shorter gate lengths.
Item Type: | Journal Article | ||||
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Subjects: | Q Science > QC Physics T Technology > TA Engineering (General). Civil engineering (General) |
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Divisions: | Faculty of Science, Engineering and Medicine > Science > Physics | ||||
Library of Congress Subject Headings (LCSH): | Metal oxide semiconductor field-effect transistors, Germanium, Silicon | ||||
Journal or Publication Title: | IEEE Electron Device Letters | ||||
Publisher: | IEEE | ||||
ISSN: | 0741-3106 | ||||
Official Date: | 2011 | ||||
Dates: |
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Volume: | Vol.32 | ||||
Number: | No.1 | ||||
Page Range: | pp. 87-89 | ||||
DOI: | 10.1109/LED.2010.2089968 | ||||
Status: | Peer Reviewed | ||||
Publication Status: | Published | ||||
Funder: | Engineering and Physical Sciences Research Council (EPSRC), Seventh Framework Programme (European Commission) (FP7/2007-2013) | ||||
Grant number: | EP/F031408/1 (EPSRC), 216171 (FP7) |
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