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Polarity effects in the x-ray photoemission of ZnO and other wurtzite semiconductors
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Allen, M. W., Zemlyanov, D. Y., Waterhouse, G. I. N., Metson, J. B., Veal, T. D. (Tim D.), McConville, C. F. (Chris F.) and Durbin, S. M. (2011) Polarity effects in the x-ray photoemission of ZnO and other wurtzite semiconductors. Applied Physics Letters, Vol.98 (No.10). p. 101906. doi:10.1063/1.3562308 ISSN 0003-6951.
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Official URL: http://dx.doi.org/10.1063/1.3562308
Abstract
Significant polarity-related effects were observed in the near-surface atomic composition and valence band electronic structure of ZnO single crystals, investigated by x-ray photoemission spectroscopy using both Al K(alpha) (1486.6 eV) and synchrotron radiation (150 to 1486 eV). In particular, photoemission from the lowest binding energy valence band states was found to be significantly more intense on the Zn-polar face compared to the O-polar face. This is a consistent effect that can be used as a simple, nondestructive indicator of crystallographic polarity in ZnO and other wurtzite semiconductors. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3562308]
Item Type: | Journal Article | ||||
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Subjects: | Q Science > QC Physics | ||||
Divisions: | Faculty of Science, Engineering and Medicine > Science > Physics | ||||
Journal or Publication Title: | Applied Physics Letters | ||||
Publisher: | American Institute of Physics | ||||
ISSN: | 0003-6951 | ||||
Official Date: | 7 March 2011 | ||||
Dates: |
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Volume: | Vol.98 | ||||
Number: | No.10 | ||||
Page Range: | p. 101906 | ||||
DOI: | 10.1063/1.3562308 | ||||
Status: | Peer Reviewed | ||||
Publication Status: | Published | ||||
Access rights to Published version: | Restricted or Subscription Access | ||||
Funder: | Marsden Fund | ||||
Grant number: | UOC0909 (Marsden Fund) |
Data sourced from Thomson Reuters' Web of Knowledge
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