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Structural study of Si1−xGex nanocrystals embedded in SiO2 films
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Pinto, S.R.C., Kashtiban, Reza J., Rolo, A.G., Buljan, M., Chahboun, A., Bangert, U., Barradas, N.P., Alves, E. and Gomes, M.J.M. (2010) Structural study of Si1−xGex nanocrystals embedded in SiO2 films. Thin Solid Films, Vol. 518 (No. 9). pp. 2569-2572. doi:10.1016/j.tsf.2009.09.148 ISSN 00406090.
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Official URL: http://dx.doi.org/10.1016/j.tsf.2009.09.148
Abstract
We have investigated the structural properties of Si1 − xGex nanocrystals formed in an amorphous SiO2 matrix by magnetron sputtering deposition. The influence of deposition parameters on nanocrystal size, shape, arrangement and internal structure was examined by X-ray diffraction, Raman spectroscopy, grazing incidence small angle X-ray scattering, and high resolution transmission electron microscopy. We found conditions for the formation of spherical Si1 − xGex nanocrystals with average sizes between 3 and 13 nm, uniformly distributed in the matrix. In addition we have shown the influence of deposition parameters on average nanocrystal size and Ge content x.
Item Type: | Journal Article | ||||
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Divisions: | Faculty of Science, Engineering and Medicine > Science > Physics | ||||
Journal or Publication Title: | Thin Solid Films | ||||
Publisher: | Elsevier Science BV | ||||
ISSN: | 00406090 | ||||
Official Date: | 2010 | ||||
Dates: |
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Volume: | Vol. 518 | ||||
Number: | No. 9 | ||||
Page Range: | pp. 2569-2572 | ||||
DOI: | 10.1016/j.tsf.2009.09.148 | ||||
Status: | Peer Reviewed | ||||
Publication Status: | Published | ||||
Access rights to Published version: | Restricted or Subscription Access |
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