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Influence of charged-dislocation density variations on carrier mobility in heteroepitaxial semiconductors : the case of SnO2 on sapphire
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Vasheghani Farahani, Sepehr, Veal, T. D. (Tim D.), Sánchez, Ana M., Bierwagen, O., White, M. E., Gorfman, S., Thomas, Pam A., Speck, James S. and McConville, C. F. (Chris F.) (2012) Influence of charged-dislocation density variations on carrier mobility in heteroepitaxial semiconductors : the case of SnO2 on sapphire. Physical Review B (Condensed Matter and Materials Physics), Volume 86 (Number 24). Article number 245315. doi:10.1103/PhysRevB.86.245315 ISSN 1098-0121.
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Official URL: http://dx.doi.org/10.1103/PhysRevB.86.245315
Abstract
In highly mismatched heteroepitaxial systems, the influence of carrier- and dislocation-density variations on carrier mobility is revealed. Transmission electron microscopy reveals the variation of dislocation density through a series of SnO2 films grown by molecular-beam epitaxy on sapphire substrates where the lattice mismatch exceeds 11%. A layer-by-layer parallel conduction treatment of the carrier mobility in SnO2 epilayers is used to illustrate the dominant role of the depth-dependent dislocation density and charge profile in determining the film-thickness dependence of the transport properties.
Item Type: | Journal Article | ||||
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Divisions: | Faculty of Science, Engineering and Medicine > Science > Physics | ||||
Journal or Publication Title: | Physical Review B (Condensed Matter and Materials Physics) | ||||
Publisher: | American Physical Society | ||||
ISSN: | 1098-0121 | ||||
Official Date: | 2012 | ||||
Dates: |
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Volume: | Volume 86 | ||||
Number: | Number 24 | ||||
Page Range: | Article number 245315 | ||||
DOI: | 10.1103/PhysRevB.86.245315 | ||||
Status: | Peer Reviewed | ||||
Publication Status: | Published | ||||
Access rights to Published version: | Restricted or Subscription Access |
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