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Modeling of MOS-Side carrier injection in trench-gate IGBTs
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Lu, Liqing, Chen, Zhiyang, Bryant, Angus T., Hudgins, Jerry L., Palmer, Patrick R. and Santi, Enrico (2010) Modeling of MOS-Side carrier injection in trench-gate IGBTs. IEEE Transactions on Industry Applications, Vol.46 (No.2). pp. 875-883. doi:10.1109/TIA.2009.2039770 ISSN 0093-9994.
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Official URL: http://dx.doi.org/10.1109/TIA.2009.2039770
Abstract
A compact trench-gate insulated-gate bipolar transistor model that captures MOS-side carrier injection is developed. The model retains the simplicity of a 1-D solution to the ambipolar diffusion equation, but at the same time, captures the MOS-side carrier injection and its effects on steady-state carrier distribution in the drift region and on switching waveforms.
Item Type: | Journal Article | ||||
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Subjects: | T Technology > TA Engineering (General). Civil engineering (General) T Technology > TK Electrical engineering. Electronics Nuclear engineering |
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Divisions: | Faculty of Science, Engineering and Medicine > Engineering > Engineering | ||||
Journal or Publication Title: | IEEE Transactions on Industry Applications | ||||
Publisher: | IEEE | ||||
ISSN: | 0093-9994 | ||||
Official Date: | March 2010 | ||||
Dates: |
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Volume: | Vol.46 | ||||
Number: | No.2 | ||||
Number of Pages: | 9 | ||||
Page Range: | pp. 875-883 | ||||
DOI: | 10.1109/TIA.2009.2039770 | ||||
Status: | Peer Reviewed | ||||
Publication Status: | Published | ||||
Access rights to Published version: | Restricted or Subscription Access | ||||
Funder: | U.S. Office of Naval Research | ||||
Grant number: | N00014-02-1-0623, N00014-08-1-0080 |
Data sourced from Thomson Reuters' Web of Knowledge
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