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p-Si0.3Ge0.7 and p-Si0.2Ge0.8 MOSFETs of enhanced performance
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UNSPECIFIED (2003) p-Si0.3Ge0.7 and p-Si0.2Ge0.8 MOSFETs of enhanced performance. In: 33rd European Solid-State Device Research Conference, ESTORIL, PORTUGAL, SEP 16-18, 2003. Published in: ESSDERC 2003: PROCEEDINGS OF THE 33RD EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE pp. 557-560. ISBN 0-7803-7999-3.
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Abstract
Measurements of current drive in p-Si1-xGex MOSFETs, with x = 0.7 and 0.8, reveal an enhancement ratio of over 2 times as compared to a Si device at an effective channel length of 0.55 mum. They also show a lower knee voltage in output I-V characteristics while retaining similar values of drain induced barrier lowering, subthreshold swing, and off current for devices with Sb punch-through stopper.
Item Type: | Conference Item (UNSPECIFIED) | ||||
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Subjects: | T Technology > TK Electrical engineering. Electronics Nuclear engineering Q Science > QC Physics |
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Journal or Publication Title: | ESSDERC 2003: PROCEEDINGS OF THE 33RD EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE | ||||
Publisher: | IEEE | ||||
ISBN: | 0-7803-7999-3 | ||||
Editor: | Franca, J and Freitas, P | ||||
Official Date: | 2003 | ||||
Dates: |
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Number of Pages: | 4 | ||||
Page Range: | pp. 557-560 | ||||
Publication Status: | Published | ||||
Title of Event: | 33rd European Solid-State Device Research Conference | ||||
Location of Event: | ESTORIL, PORTUGAL | ||||
Date(s) of Event: | SEP 16-18, 2003 |
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