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Temperature invariance of InN electron accumulation
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UNSPECIFIED (2004) Temperature invariance of InN electron accumulation. PHYSICAL REVIEW B, 70 (11). -. doi:10.1103/PhysRevB.70.115333 ISSN 1098-0121.
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Official URL: http://dx.doi.org/10.1103/PhysRevB.70.115333
Abstract
The temperature dependence of the electron accumulation at clean InN(0001)-(1x1) surfaces has been investigated by high-resolution electron-energy-loss spectroscopy. Semiclassical dielectric theory simulations of the energy-loss spectra at 295 K and 565 K along with solutions to the Poisson equation enable carrier profiles of the near-surface region to be determined. These measurements reveal similar electron accumulation for both temperatures. The surface-state density, N-ss, and the surface Fermi level, E-FS, were found to be independent of temperature, with N(ss)similar to2.4x10(13) cm(-2) and E(FS)similar to1.5 eV above the valence-band maximum. The slight difference in the carrier profiles between the two temperatures can be accounted for by the change in the electron screening length. This is a consequence of the reduction in the band gap that results in a decrease in the electron effective mass with increasing temperature.
Item Type: | Journal Article | ||||
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Subjects: | Q Science > QC Physics | ||||
Journal or Publication Title: | PHYSICAL REVIEW B | ||||
Publisher: | AMERICAN PHYSICAL SOC | ||||
ISSN: | 1098-0121 | ||||
Official Date: | September 2004 | ||||
Dates: |
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Volume: | 70 | ||||
Number: | 11 | ||||
Number of Pages: | 6 | ||||
Page Range: | - | ||||
DOI: | 10.1103/PhysRevB.70.115333 | ||||
Publication Status: | Published |
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