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Low-frequency noise suppression and dc characteristics enhancement in sub-mu m metamorphic p-MOSFETs with strained Si0.3Ge0.7 channel grown by MBE
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UNSPECIFIED (2004) Low-frequency noise suppression and dc characteristics enhancement in sub-mu m metamorphic p-MOSFETs with strained Si0.3Ge0.7 channel grown by MBE. In: 1st International SiGe Technology and Device Meeting (ISTDM), Nagoya Univ Symposion, Nagoya, JAPAN, JAN 15-17, 2003. Published in: Surface Science, 224 (1-4). pp. 265-269. doi:10.1016/j.apsusc.2003.08.053 ISSN 0169-4332.
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Official URL: http://dx.doi.org/10.1016/j.apsusc.2003.08.053
Abstract
For the first time, we have demonstrated the reduced low-frequency (LF) noise in sub-mum metamorphic high Ge content p-Si0.3Ge0.7 MOSFETs in comparison with p-Si MOSFETs at 293 K. Three times lower LF noise over 1-100 Hz range at V-DS = -50 mV and V-G - V-TH = - 1.5 V was measured for the 0.55 mum effective gate length p-Si0.3Ge0.7 MOSFET compared with p-Si MOSFET. Over three times drain current enhancement in saturation region of output current-voltage characteristics at V-DS = -2.5 V for a 0.55 muM p-Si0.3Ge0.7 MOSFET in comparison with p-Si MOSFET is observed. (C) 2003 Elsevier B.V. All rights reserved.
Item Type: | Conference Item (UNSPECIFIED) | ||||
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Subjects: | Q Science > QD Chemistry T Technology > TA Engineering (General). Civil engineering (General) Q Science > QC Physics |
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Journal or Publication Title: | Surface Science | ||||
Publisher: | ELSEVIER SCIENCE BV | ||||
ISSN: | 0169-4332 | ||||
Official Date: | 15 March 2004 | ||||
Dates: |
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Volume: | 224 | ||||
Number: | 1-4 | ||||
Number of Pages: | 5 | ||||
Page Range: | pp. 265-269 | ||||
DOI: | 10.1016/j.apsusc.2003.08.053 | ||||
Publication Status: | Published | ||||
Title of Event: | 1st International SiGe Technology and Device Meeting (ISTDM) | ||||
Location of Event: | Nagoya Univ Symposion, Nagoya, JAPAN | ||||
Date(s) of Event: | JAN 15-17, 2003 |
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