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In situ scanning tunneling microscopy of InAs quantum dots on GaAs(001) during molecular beam epitaxial growth
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UNSPECIFIED (2003) In situ scanning tunneling microscopy of InAs quantum dots on GaAs(001) during molecular beam epitaxial growth. Surface Science, 544 (2-3). pp. 234-240. doi:10.1016/j.susc.2003.08.021 ISSN 0039-6028.
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Official URL: http://dx.doi.org/10.1016/j.susc.2003.08.021
Abstract
Arrays of InAs quantum dots (QDs) have been studied using in situ scanning tunneling microscopy (STM) during their growth by molecular beam epitaxy on GaAs(001). At a substrate temperature of 400 degreesC under As-4 flux, both the QDs and the underlying step-terrace structure of the wetting layer (WL) are found to be static, with neither step-flow nor QD ripening observed. Higher resolution images of the mature WL show slightly different [110] periodicities to those observed in quenched STM studies. (C) 2003 Elsevier B.V. All rights reserved.
Item Type: | Journal Article | ||||
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Subjects: | Q Science > QD Chemistry Q Science > QC Physics |
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Journal or Publication Title: | Surface Science | ||||
Publisher: | ELSEVIER SCIENCE BV | ||||
ISSN: | 0039-6028 | ||||
Official Date: | 20 October 2003 | ||||
Dates: |
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Volume: | 544 | ||||
Number: | 2-3 | ||||
Number of Pages: | 7 | ||||
Page Range: | pp. 234-240 | ||||
DOI: | 10.1016/j.susc.2003.08.021 | ||||
Publication Status: | Published |
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