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Si/SiC bonded wafer: a route to carbon free SiO2 on SiC
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Pérez-Tomás, Amador, Lodzinski, M., Guy, O. J., Jennings, M. R., Placidi, M., Llobet, J., Gammon, P. M., Davis, M. C., Covington, James A., Burrows, S. E. and Mawby, P. A. (2009) Si/SiC bonded wafer: a route to carbon free SiO2 on SiC. Applied Physics Letters, Vol.94 (No.10). Article: 103510. doi:10.1063/1.3099018 ISSN 0003-6951.
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Official URL: http://dx.doi.org/10.1063/1.3099018
Abstract
This paper describes the thermal oxidation of Si/SiC heterojunction structures, produced using a layer-transfer process, as an alternative solution to fabricating SiC metal-oxide-semiconductor (MOS) devices with lower interface state densities (Dit). Physical characterization demonstrate that the transferred Si layer is relatively smooth, uniform, and essentially monocrystalline. The Si on SiC has been totally or partially thermally oxidized at 900–1150 °C. Dit for both partially and completely oxidized silicon layers on SiC were significantly lower than Dit values for MOS capacitors fabricated via conventional thermal oxidation of SiC. The quality of the SiO2, formed by oxidation of a wafer-bonded silicon layer reported here has the potential to realize a number of innovative heterojunction concepts and devices, including the fabrication of high quality and reliable SiO2 gate oxides.
Item Type: | Journal Article | ||||
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Subjects: | T Technology > TK Electrical engineering. Electronics Nuclear engineering Q Science > QC Physics |
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Divisions: | Faculty of Science, Engineering and Medicine > Engineering > Engineering Faculty of Science, Engineering and Medicine > Science > Physics |
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Library of Congress Subject Headings (LCSH): | Metal oxide semiconductors, Silicon-carbide, Silicon compounds, Semiconductor films, Semiconductors -- Junctions, Energy gap (Physics) | ||||
Journal or Publication Title: | Applied Physics Letters | ||||
Publisher: | American Institute of Physics | ||||
ISSN: | 0003-6951 | ||||
Official Date: | 12 March 2009 | ||||
Dates: |
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Volume: | Vol.94 | ||||
Number: | No.10 | ||||
Number of Pages: | 3 | ||||
Page Range: | Article: 103510 | ||||
DOI: | 10.1063/1.3099018 | ||||
Status: | Peer Reviewed | ||||
Publication Status: | Published | ||||
Access rights to Published version: | Open Access (Creative Commons) | ||||
Funder: | Great Britain. Dept. of Trade and Industry (DTI) | ||||
Grant number: | TP/3/OPT/6/I/ 17311 (DTI) |
Data sourced from Thomson Reuters' Web of Knowledge
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