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X-ray photoemission spectroscopy determination of the InN/yttria stabilized cubic-zirconia valence band offset
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King, Philip David, Veal, T. D. (Tim D.), Hatfield, S. A., Jefferson, Paul Harvey, McConville, C. F. (Chris F.), Kendrick, C. E., Swartz, C. H. and Durbin, Steven M. (2007) X-ray photoemission spectroscopy determination of the InN/yttria stabilized cubic-zirconia valence band offset. Applied Physics Letters, Vol.91 (No.11). p. 112103. doi:10.1063/1.2783214 ISSN 0003-6951.
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Official URL: http://dx.doi.org/10.1063/1.2783214
Abstract
The valence band offset of wurtzite InN(0001)/yttria stabilized cubic-zirconia (YSZ)(111) heterojunctions is determined by x-ray photoemission spectroscopy to be 1.19±0.17 eV giving a conduction band offset of 3.06±0.20 eV. Consequently, a type-I heterojunction forms between InN and YSZ in the straddling arrangement. The low lattice mismatch and high band offsets suggest potential for use of YSZ as a gate dielectric in high-frequency InN-based electronic devices.
Item Type: | Journal Article | ||||
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Subjects: | T Technology > TK Electrical engineering. Electronics Nuclear engineering Q Science > QC Physics |
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Divisions: | Faculty of Science, Engineering and Medicine > Science > Physics | ||||
Library of Congress Subject Headings (LCSH): | X-ray photoelectron spectroscopy, Semiconductors -- Junctions, Heterojunctions, Yttrium alloys, Zirconium oxide, Indium compounds, Lattice dynamics | ||||
Journal or Publication Title: | Applied Physics Letters | ||||
Publisher: | American Institute of Physics | ||||
ISSN: | 0003-6951 | ||||
Official Date: | 10 September 2007 | ||||
Dates: |
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Volume: | Vol.91 | ||||
Number: | No.11 | ||||
Page Range: | p. 112103 | ||||
DOI: | 10.1063/1.2783214 | ||||
Status: | Peer Reviewed | ||||
Access rights to Published version: | Open Access (Creative Commons) | ||||
Date of first compliant deposit: | 1 January 2016 | ||||
Date of first compliant Open Access: | 1 January 2016 | ||||
Funder: | Engineering and Physical Sciences Research Council (EPSRC), New Zealand. Ministry of Research, Science, and Technology (MORST), MacDiarmid Institute for Advanced Materials and Nanotechnology (MIAMN) | ||||
Grant number: | EP/C535553/1 (EPSRC), GR/S14252/01 (EPSRC), UOCX0212 (MORST), |
Data sourced from Thomson Reuters' Web of Knowledge
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