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Photoluminescence spectroscopy of bandgap reduction in dilute InNAs alloys
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Veal, T. D. (Tim D.), Piper, L. F. J., Jefferson, Paul Harvey, Mahboob, I., McConville, C. F. (Chris F.), Merrick, M., Hosea, T. J. C., Murdin, B. N. and Hopkinson, M. (2005) Photoluminescence spectroscopy of bandgap reduction in dilute InNAs alloys. Applied Physics Letters, Vol.87 (No.18). p. 182114. doi:10.1063/1.2126117 ISSN 0003-6951.
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Official URL: http://dx.doi.org/10.1063/1.2126117
Abstract
Photoluminescence (PL) has been observed from dilute InNxAs1–x epilayers grown by molecular-beam epitaxy. The PL spectra unambiguously show band gap reduction with increasing N content. The variation of the PL spectra with temperature is indicative of carrier detrapping from localized to extended states as the temperature is increased. The redshift of the free exciton PL peak with increasing N content and temperature is reproduced by the band anticrossing model, implemented via a (5×5) k·p Hamiltonian.
Item Type: | Journal Article | ||||
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Subjects: | Q Science > QC Physics | ||||
Divisions: | Faculty of Science, Engineering and Medicine > Science > Physics | ||||
Library of Congress Subject Headings (LCSH): | Indium compounds, Photoluminescence, Semiconductors, Molecular beam epitaxy, Red shift, Energy gap (Physics) | ||||
Journal or Publication Title: | Applied Physics Letters | ||||
Publisher: | American Institute of Physics | ||||
ISSN: | 0003-6951 | ||||
Official Date: | 28 October 2005 | ||||
Dates: |
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Volume: | Vol.87 | ||||
Number: | No.18 | ||||
Page Range: | p. 182114 | ||||
DOI: | 10.1063/1.2126117 | ||||
Status: | Peer Reviewed | ||||
Access rights to Published version: | Open Access (Creative Commons) | ||||
Funder: | Engineering and Physical Sciences Research Council (EPSRC) | ||||
Grant number: | GR/S56030/01 (EPSRC) |
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