2017

Konishi, T., Clarke, E., Burrows, Christopher W., Bomphrey, John James, Murray, R. and Bell, Gavin R. (2017) Spatial regularity of InAs-GaAs quantum dots : quantifying the dependence of lateral ordering on growth rate. Scientific Reports, 7 . 42606 . doi:10.1038/srep42606

2016

Linhart, W. M., Rajpalke, M. K., Buckeridge, John, Murgatroyd, P. A. E., Bomphrey, John James, Alaria, J., Catlow, C. R. A., Scanlon, D. O., Ashwin, M. J. and Veal, T. D. (Tim D.) (2016) Band gap reduction in InNxSb1-x alloys : optical absorption, k · P modeling, and density functional theory. Applied Physics Letters, 109 (13). 132104. doi:10.1063/1.4963836

2015

Bomphrey, John James, Ashwin, M. J. and Jones, T. S. (Tim S.) (2015) The formation of high number density InSb quantum dots, resulting from direct InSb/GaSb (001) heteroepitaxy. Journal of Crystal Growth, 420 . pp. 1-5. doi:10.1016/j.jcrysgro.2015.03.025

Bomphrey, John James, Ashwin, M. J., Jones, T. S. (Tim S.) and Bell, Gavin R. (2015) The c(4×4)–a(1×3) surface reconstruction transition on InSb(001) : static versus dynamic conditions. Results in physics, Volume 5 . pp. 154-155. doi:10.1016/j.rinp.2015.05.004

2014

Rajpalke, Mohana K., Linhart, W. M., Yu, K. M., Birkett, Michael Alexander, Alaria, Jonathan, Bomphrey, John James, Sallis, S., Piper, L. F. J., Jones, T. S. (Tim S.), Ashwin, M. J. and Veal, T. D. (Tim D.) (2014) Bi-induced band gap reduction in epitaxial InSbBi alloys. Applied Physics Letters, Volume 105 (Number 21). Article number 212101. doi:10.1063/1.4902442

2011

Bomphrey, John James (2011) Growth and characterisation of dilute nitride antimonide layers by plasma-assisted molecular beam epitaxy. PhD thesis, University of Warwick.

Ashwin, M. J., Veal, T. D. (Tim D.), Bomphrey, John James, Dunn, I. R., Walker, D., Thomas, Pam A. and Jones, T. S. (Tim S.) (2011) Controlled nitrogen incorporation in GaNSb alloys. AIP Advances, Vol. 1 (No. 3). 032159. doi:10.1063/1.3643259