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Jump to: Advantage West Midlands (AWM) | Birmingham Science City | Department of Trade and Industry (UK) | Engineering and Physical Sciences Research Council (EPSRC) | European Commission (EC) | European Regional Development Fund (ERDF) | Great Britain. Department of Trade and Industry (DTI) | Great Britain. Dept. of Trade and Industry (DTI) | Innovate UK | Royal Academy of Engineering (Great Britain) | Spain. Ministerio de Ciencia e Innovación (MCINN) | Spain. Ministerio de Economía y Competitividad [Ministry of Economy and Competitiveness] (MINECO) | Spanish MICyN | University of Warwick Undergraduate Research Scholarship | University of Warwick. Advanced Propulsion Centre
Number of items: 28.
Advantage West Midlands (AWM)
Hamilton, Dean P., Jennings, Michael R., Pérez-Tomás, Amador, Russell, Stephen A. O., Hindmarsh, Steven A., Fisher, Craig A. and Mawby, P. A. (Philip A.) (2016) High temperature electrical and thermal aging performance and application considerations for SiC power DMOSFETs. IEEE Transactions on Power Electronics, 32 (10). pp. 7967-7979. doi:10.1109/TPEL.2016.2636743 ISSN 0885-8993.
Fisher, Craig A., Jennings, M. R., Sharma, Yogesh K., Hamilton, Dean P., Li, Fan, Gammon, P. M., Pérez-Tomás, Amador, Thomas, Stephen M., Burrows, S. E. (Susan E.) and Mawby, P. A. (Philip A.) (2014) On the application of novel high temperature oxidation processes to enhance the performance of high voltage silicon carbide PiN diodes. In: 2014 16th European Conference on Power Electronics and Applications (EPE'14-ECCE Europe), , Finland, 26-28 Aug 2014. Published in: 2014 16th European Conference on Power Electronics and Applications (EPE'14-ECCE Europe), pp. 1-9. doi:10.1109/EPE.2014.6910738
Birmingham Science City
Fisher, Craig A., Jennings, M. R., Sharma, Yogesh K., Hamilton, Dean P., Li, Fan, Gammon, P. M., Pérez-Tomás, Amador, Thomas, Stephen M., Burrows, S. E. (Susan E.) and Mawby, P. A. (Philip A.) (2014) On the application of novel high temperature oxidation processes to enhance the performance of high voltage silicon carbide PiN diodes. In: 2014 16th European Conference on Power Electronics and Applications (EPE'14-ECCE Europe), , Finland, 26-28 Aug 2014. Published in: 2014 16th European Conference on Power Electronics and Applications (EPE'14-ECCE Europe), pp. 1-9. doi:10.1109/EPE.2014.6910738
Department of Trade and Industry (UK)
Guy, Owen J., Lodzinski, Michal, Castaing, Ambroise, Igic, P. M., Pérez-Tomás, Amador, Jennings, M. R. and Mawby, P. A. (Philip A.) (2008) Silicon carbide Schottky diodes and MOSFETs: solutions to performance problems. In: 13th International Power Electronics and Motion Control Conference, Poznan, Poland, Sep 01-03, 2008. Published in: Proceedings of the 13th International Power Electronics and Motion Control Conference, Vol.1-5 pp. 2464-2471. doi:10.1109/EPEPEMC.2008.4635633
Engineering and Physical Sciences Research Council (EPSRC)
Woodend, Lee, Gammon, P. M., Shah, Vishal, Pérez-Tomás, Amador, Li, Fan, Hamilton, Dean P., Myronov, Maksym and Mawby, P. A. (Philip A.) (2017) Cryogenic characterisation and modelling of commercial SiC MOSFETs. Materials Science Forum, 897 . pp. 557-560. doi:10.4028/www.scientific.net/MSF.897.557 ISSN 1662-9752.
Li, Fan, Sharma, Yogesh K., Walker, David, Hindmarsh, Steven A., Jennings, Michael, Martin, David, Fisher, Craig A., Gammon, P. M., Pérez-Tomás, Amador and Mawby, P. A. (2016) 3C-SiC transistor with Ohmic contacts defined at room temperature. IEEE Electron Device Letters . doi:10.1109/LED.2016.2593771 ISSN 0741-3106.
Li, Fan, Sharma, Yogesh K., Shah, V. A., Jennings, M. R., Pérez-Tomás, Amador, Myronov, Maksym, Fisher, Craig A., Leadley, D. R. (David R.) and Mawby, P. A. (Philip A.) (2015) Electrical activation of nitrogen heavily implanted 3C-SiC(100). Applied surface science, 353 . pp. 958-963. doi:10.1016/j.apsusc.2015.06.169 ISSN 0169-4332.
Fisher, Craig A., Jennings, M. R., Sharma, Yogesh K., Hamilton, Dean P., Li, Fan, Gammon, P. M., Pérez-Tomás, Amador, Thomas, Stephen M., Burrows, S. E. (Susan E.) and Mawby, P. A. (Philip A.) (2014) On the application of novel high temperature oxidation processes to enhance the performance of high voltage silicon carbide PiN diodes. In: 2014 16th European Conference on Power Electronics and Applications (EPE'14-ECCE Europe), , Finland, 26-28 Aug 2014. Published in: 2014 16th European Conference on Power Electronics and Applications (EPE'14-ECCE Europe), pp. 1-9. doi:10.1109/EPE.2014.6910738
Gammon, P. M., Pérez-Tomás, Amador, Shah, V. A., Vavasour, O., Donchev, E., Pang, J. S., Myronov, Maksym, Fisher, Craig A., Jennings, M. R., Leadley, D. R. (David R.) and Mawby, P. A. (Philip A.) (2013) Modelling the inhomogeneous SiC Schottky interface. Journal of Applied Physics, Volume 114 (Number 22). Article number 223704. doi:10.1063/1.4842096 ISSN 0021-8979.
Gammon, P. M., Donchev, E., Pérez-Tomás, Amador, Shah, V. A., Pang, J. S., Petrov, P. K. (Peter K.), Jennings, M. R., Fisher, Craig A., Mawby, P. A. (Philip A.), Leadley, D. R. (David R.) and Alford, Neil McN. (2012) A study of temperature-related non-linearity at the metal-silicon interface. Journal of Applied Physics, Vol.112 . 114513 . doi:http://dx.doi.org/10.1063/1.4768718 ISSN 0021-8979.
European Commission (EC)
Gammon, P. M., Pérez-Tomás, Amador, Shah, V. A., Vavasour, O., Donchev, E., Pang, J. S., Myronov, Maksym, Fisher, Craig A., Jennings, M. R., Leadley, D. R. (David R.) and Mawby, P. A. (Philip A.) (2013) Modelling the inhomogeneous SiC Schottky interface. Journal of Applied Physics, Volume 114 (Number 22). Article number 223704. doi:10.1063/1.4842096 ISSN 0021-8979.
European Regional Development Fund (ERDF)
Hamilton, Dean P., Jennings, Michael R., Pérez-Tomás, Amador, Russell, Stephen A. O., Hindmarsh, Steven A., Fisher, Craig A. and Mawby, P. A. (Philip A.) (2016) High temperature electrical and thermal aging performance and application considerations for SiC power DMOSFETs. IEEE Transactions on Power Electronics, 32 (10). pp. 7967-7979. doi:10.1109/TPEL.2016.2636743 ISSN 0885-8993.
Fisher, Craig A., Jennings, M. R., Sharma, Yogesh K., Hamilton, Dean P., Li, Fan, Gammon, P. M., Pérez-Tomás, Amador, Thomas, Stephen M., Burrows, S. E. (Susan E.) and Mawby, P. A. (Philip A.) (2014) On the application of novel high temperature oxidation processes to enhance the performance of high voltage silicon carbide PiN diodes. In: 2014 16th European Conference on Power Electronics and Applications (EPE'14-ECCE Europe), , Finland, 26-28 Aug 2014. Published in: 2014 16th European Conference on Power Electronics and Applications (EPE'14-ECCE Europe), pp. 1-9. doi:10.1109/EPE.2014.6910738
Great Britain. Department of Trade and Industry (DTI)
Pérez-Tomás, Amador, Jennings, M. R., Mawby, P. A. (Philip A.), Millan, J., Godignon, P., Montserrat, Josep, Rossinyol, E., Vennegues, P. and Stoemenos, J. (2008) Interfacial properties of thermally oxidized Ta2Si on Si. Surface and Interface Analysis, Volume 40 (Number 8). pp. 1164-1167. doi:10.1002/sia.2859 ISSN 0142-2421.
Great Britain. Dept. of Trade and Industry (DTI)
Gammon, P. M., Pérez-Tomás, Amador, Jennings, M. R., Guy, O. J., Rimmer, N., Llobet, J., Mestres, N., Godignon, P., Placidi, M., Zabala, M., Covington, James A. and Mawby, P. A. (2010) Integration of HfO2 on Si/SiC heterojunctions for the gate architecture of SiC power devices. Applied Physics Letters, Vol.97 (No.1). 013506. doi:10.1063/1.3462932 ISSN 0003-6951.
Pérez-Tomás, Amador, Lodzinski, M., Guy, O. J., Jennings, M. R., Placidi, M., Llobet, J., Gammon, P. M., Davis, M. C., Covington, James A., Burrows, S. E. and Mawby, P. A. (2009) Si/SiC bonded wafer: a route to carbon free SiO2 on SiC. Applied Physics Letters, Vol.94 (No.10). Article: 103510. doi:10.1063/1.3099018 ISSN 0003-6951.
Jennings, M. R., Pérez-Tomás, Amador, Guy, O. J., Hammond, Richard, Burrows, S. E., Gammon, P. M., Lodzinski, M., Covington, James A. and Mawby, P. A. (2008) Si/SiC heterojunctions fabricated by direct wafer bonding. Electrochemical and Solid State Letters, Vol.11 (No.11). H306-H308. doi:10.1149/1.2976158 ISSN 1099-0062.
Pérez-Tomás, Amador, Jennings, M. R., Gammon, P. M., Roberts, G. J., Mawby, P. A. (Philip A.), Millan, J., Godignon, P., Montserrat, J. and Mestres, N. (2008) SiC MOSFETs with thermally oxidized Ta2Si stacked on SiO2 as high-k gate insulator. Microelectronic Engineering, Volume 85 (Number 4). pp. 704-709. doi:10.1016/j.mee.2007.12.073 ISSN 0167-9317.
Innovate UK
Russell, Stephen, Jennings, M. R. (Michael R.), Dai, Tianxiang, Li, Fan, Hamilton, Dean P., Fisher, Craig A., Sharma, Yogesh K., Mawby, P. A. (Philip A.) and Pérez-Tomás, Amador (2017) Functional oxide as an extreme high-k dielectric towards 4H-SiC MOSFET incorporation. Materials Science Forum, 897 . pp. 155-158. doi:10.4028/www.scientific.net/MSF.897.155 ISSN 1662-9752.
Royal Academy of Engineering (Great Britain)
Woodend, Lee, Gammon, P. M., Shah, Vishal, Pérez-Tomás, Amador, Li, Fan, Hamilton, Dean P., Myronov, Maksym and Mawby, P. A. (Philip A.) (2017) Cryogenic characterisation and modelling of commercial SiC MOSFETs. Materials Science Forum, 897 . pp. 557-560. doi:10.4028/www.scientific.net/MSF.897.557 ISSN 1662-9752.
Chan, Chun Wa, Gammon, P. M., Shah, V. A., Chen, Han, Jennings, M. R., Fisher, Craig A., Pérez-Tomás, Amador, Myronov, Maksym and Mawby, P. A. (Philip A.) (2015) Simulations of a lateral PiN diode on SiSiC substrate for high temperature applications. Materials Research Forum, 821 (7). pp. 624-627. doi:10.4028/www.scientific.net/MSF.821-823.624
Gammon, P. M., Pérez-Tomás, Amador, Shah, V. A., Vavasour, O., Donchev, E., Pang, J. S., Myronov, Maksym, Fisher, Craig A., Jennings, M. R., Leadley, D. R. (David R.) and Mawby, P. A. (Philip A.) (2013) Modelling the inhomogeneous SiC Schottky interface. Journal of Applied Physics, Volume 114 (Number 22). Article number 223704. doi:10.1063/1.4842096 ISSN 0021-8979.
Gammon, P. M., Donchev, E., Pérez-Tomás, Amador, Shah, V. A., Pang, J. S., Petrov, P. K. (Peter K.), Jennings, M. R., Fisher, Craig A., Mawby, P. A. (Philip A.), Leadley, D. R. (David R.) and Alford, Neil McN. (2012) A study of temperature-related non-linearity at the metal-silicon interface. Journal of Applied Physics, Vol.112 . 114513 . doi:http://dx.doi.org/10.1063/1.4768718 ISSN 0021-8979.
Spain. Ministerio de Ciencia e Innovación (MCINN)
Pérez-Tomás, Amador, Placidi, Marcel, Fontserè, A., Gammon, P. M. and Jennings, M. R. (2011) Temperature behavior and modeling of ohmic contacts to Si+ implanted n-type GaN. Microelectronics Reliability, Vol.51 (No.8). pp. 1325-1329. doi:10.1016/j.microrel.2011.03.023 ISSN 00262714.
Spain. Ministerio de Economía y Competitividad [Ministry of Economy and Competitiveness] (MINECO)
Pérez-Tomás, Amador, Catalàn, G., Fontserè, A., Iglesias, V., Chen, Han, Gammon, P. M., Jennings, M. R., Thomas, M., Fisher, Craig A., Sharma, Yogesh K., Placidi, M., Chmielowska, M., Chenot, S., Porti, M., Nafría, M. and Cordier, Y. (2015) Nanoscale conductive pattern of the homoepitaxial AlGaN/GaN transistor. Nanotechnology, 26 (11). pp. 1-10. 115203. ISSN 0957-4484.
Spanish MICyN
Fontserè, A., Pérez-Tomás, Amador, Placidi, M., Fernández-Martínez, P., Baron, N., Chenot, S., Cordier, Y., Moreno, J.C., Gammon, P. M. and Jennings, M. R. (2011) Temperature dependence of Al/Ti-based Ohmic contact to GaN devices : HEMT and MOSFET. Microelectronic Engineering, Vol.88 (No.10). pp. 3140-3144. doi:10.1016/j.mee.2011.06.015 ISSN 0167-9317.
University of Warwick Undergraduate Research Scholarship
Woodend, Lee, Gammon, P. M., Shah, Vishal, Pérez-Tomás, Amador, Li, Fan, Hamilton, Dean P., Myronov, Maksym and Mawby, P. A. (Philip A.) (2017) Cryogenic characterisation and modelling of commercial SiC MOSFETs. Materials Science Forum, 897 . pp. 557-560. doi:10.4028/www.scientific.net/MSF.897.557 ISSN 1662-9752.
University of Warwick. Advanced Propulsion Centre
Russell, Stephen, Pérez-Tomás, Amador, McConville, C. F., Fisher, Craig A., Hamilton, Dean P., Mawby, P. A. (Philip A.) and Jennings, Michael R. (2017) Heteroepitaxial beta-Ga2O3 on 4H-SiC for an FET with reduced self heating. Journal of the Electron Devices Society, 5 (4). pp. 256-261. ISSN 2168-6734.
This list was generated on Thu Apr 25 14:04:36 2024 BST.