Jennings, Michael R., Pérez-Tomás, Amador, Severino, Andrea, Ward, Peter, Bashir, Arif, Fisher, Craig A., Thomas, Stephen M., Gammon, Peter M., Donnellan, Benedict T., Rong, Hua, Hamilton, Dean P. and Mawby, P. A. (Philip A.) (2013) Innovative 3C-SiC on SiC via direct wafer bonding. In: 9th European Conference on Silicon Carbide and Related Materials, ECSCRM 2012, St. Petersburg, Russian Federation, 2 - 6 Sept 2012. Published in: Materials Science Forum, 740-742 pp. 271-274.

Pérez-Tomás, Amador, Fontserè, A., Jennings, M. R. and Gammon, P. M.. (2013) Modeling the effect of thin gate insulators (SiO2, SiN, Al2O3 and HfO2) on AlGaN/GaN HEMT forward characteristics grown on Si, sapphire and SiC. Materials Science in Semiconductor Processing, Volume 16 (Number 5). pp. 1336-1345. ISSN 1369-8001

Gammon, P. M., Donchev, E., Pérez-Tomás, Amador, Shah, V. A., Pang, J. S., Petrov, P. K. (Peter K.), Jennings, M. R., Fisher, C. A., Mawby, P. A. (Philip A.), Leadley, D. R. (David R.) and Alford, Neil McN.. (2012) A study of temperature-related non-linearity at the metal-silicon interface. Journal of Applied Physics, Vol.112 . 114513 . ISSN 0021-8979

Fontserè, A., Pérez-Tomás, Amador, Placidi, M., Llobet, J., Baron, N., Chenot, S., Cordier, Y., Moreno, J. C., Jennings, M. R., Gammon, P. M., Fisher, C. A., Iglesias, V., Porti, M., Bayerl, A., Lanza, M. and Nafría, M.. (2012) Nanoscale investigation of AlGaN/GaN-on-Si high electron mobility transistors. Nanotechnology, Vol.23 (No.39). Article no. 395204. ISSN 0957-4484

Fisher, Craig A., Jennings, Michael R., Bryant, Angus T., Pérez-Tomás, Amador, Gammon, Peter M., Brosselard, Pierre, Godignon, Phillippe and Mawby, P. A. (Philip A.). (2012) Physical modelling of 4H-SiC PiN diodes. Materials Science Forum, Volume 717-720 . pp. 993-996. ISSN 1662-9752

Pérez-Tomás, Amador, Placidi, Marcel, Fontserè, A., Gammon, P. M. and Jennings, M. R.. (2011) Temperature behavior and modeling of ohmic contacts to Si+ implanted n-type GaN. Microelectronics Reliability, Vol.51 (No.8). pp. 1325-1329. ISSN 00262714

Gammon, P. M., Pérez-Tomás, Amador, Jennings, M. R., Guy, O. J., Rimmer, N., Llobet, J., Mestres, Narcis, Godignon, P., Placidi, Marcel, Zabala, M., Covington, James A., 1973- and Mawby, P. A. (Philip A.). (2011) Characterisation of HfO2/Si/SiC MOS capacitors. Materials Science Forum, Vol.679-680 . pp. 674-677. ISSN 1662-9752

Fontserè, A., Pérez-Tomás, Amador, Placidi, M., Llobet, J., Baron, N., Chenot, S., Cordier, Y., Moreno, J. C., Gammon, P. M., Jennings, M. R., Porti, M., Bayerl, A., Lanza, M. and Nafría, M.. (2011) Micro and nano analysis of 0.2 Ω mm Ti/Al/Ni/Au ohmic contact to AlGaN/GaN. Applied Physics Letters, Vol.99 (No.21). article no. 213504. ISSN 0003-6951

Pérez-Tomás, Amador, Fontserè, A., Placidi, Marcel, Baron, N., Chenot, Sébastien, Cordier, Yvon, Moreno, J.C., Gammon, P. M. and Jennings, Michael R. (2011) Ohmic contact resistance to GaN devices dependence with on temperature for GaN devices. In: 8th European Conference on Silicon Carbide and Related Materials (ECSCRM 2010), Oslo, Norway, Aug 29 - Sep 2, 2010. Published in: Materials Science Forum, Vol. 679-680 pp. 816-819.

Fontserè, A., Pérez-Tomás, Amador, Placidi, M., Fernández-Martínez, P., Baron, N., Chenot, S., Cordier, Y., Moreno, J.C., Gammon, P. M. and Jennings, M. R.. (2011) Temperature dependence of Al/Ti-based Ohmic contact to GaN devices : HEMT and MOSFET. Microelectronic Engineering, Vol.88 (No.10). pp. 3140-3144. ISSN 0167-9317

Gammon, P. M., Pérez-Tomás, Amador, Jennings, M. R., Guy, O. J., Rimmer, N., Llobet, J., Mestres, N., Godignon, P., Placidi, M., Zabala, M., Covington, James A., 1973- and Mawby, P. A. (Philip A.). (2010) Integration of HfO2 on Si/SiC heterojunctions for the gate architecture of SiC power devices. Applied Physics Letters, Vol.97 (No.1). 013506. ISSN 0003-6951

Gammon, P. M., Pérez-Tomás, Amador, Jennings, M. R., Shah, V. A., Boden, S. A., Davis, M. C., Burrows, S. E. (Susan E.), Wilson, Neil Richard, 1977-, Roberts, G. J., Covington, James A., 1973- and Mawby, P. A. (Philip A.). (2010) Interface characteristics of n-n and p-n Ge/SiC heterojunction diodes formed by molecular beam epitaxy deposition. Journal of Applied Physics, Vol.107 (No.12). p. 124512. ISSN 0021-8979

Gammon, P. M., Pérez-Tomás, Amador, Jennings, M. R., Roberts, G. J., Shah, V. A., Covington, James A., 1973- and Mawby, P. A. (Philip A.) (2010) Germanium-silicon carbide heterojunction diodes - a study in device characteristics with increasing layer thickness and deposition temperature. In: 13th International Conference on Silicon Carbide and Related Materials, Nurnberg, Germany, October 11-16, 2009. Published in: Materials Science Forum, Vol.645-648 pp. 889-892.

Pérez-Tomás, Amador, Jennings, M. R., Gammon, P. M., Shah, V. A., Mawby, P. A. (Philip A.), Guy, O. J. and Hammond, R. (2010) Si on SiC, a novel platform for MOS power devices. In: 40th European Solid State Device Research Conference (ESSDERC), Seville, Spain, Sep 13-17, 2010

Jennings, M. R., Pérez-Tomás, Amador, Guy, O. J., Lodzinski, M., Gammon, P. M., Burrows, S., Covington, James A., 1973- and Mawby, P. A. (Philip A.) (2010) Silicon-on-SiC, a novel semiconductor structure for power devices. In: 13th International Conference on Silicon Carbide and Related Materials, Nurnberg, Germany, October 11-16, 2009. Published in: Materials Science Forum, Vol.645-648 pp. 1243-1246.

Gammon, P. M., Pérez-Tomás, Amador, Shah, V. A., Roberts, G. J., Jennings, M. R., Covington, James A., 1973- and Mawby, P. A. (Philip A.). (2009) Analysis of inhomogeneous Ge/SiC heterojunction diodes. Journal of Applied Physics, Vol.106 (No.9). Article no. 093708. ISSN 0021-8979

Tong, C. F., Mawby, P. A. (Philip A.), Covington, James A., 1973- and Pérez-Tomás, Amador (2009) Investigation on split-gate RSO MOSFET for 30V breakdown. In: 9th International Seminar on Power Semiconductors 2008 (ISPS 2008), Prague, Czech Republic, Aug 27-29, 2008. Published in: Proceedings of the 9th International Seminar on Power Semiconductors 2008 (ISPS 2008) pp. 97-102.

Pérez-Tomás, Amador, Lodzinski, M., Guy, O. J., Jennings, M. R., Placidi, M., Llobet, J., Gammon, P. M., Davis, M. C., Covington, James A., 1973-, Burrows, S. E. (Susan E.) and Mawby, P. A. (Philip A.). (2009) Si/SiC bonded wafer: a route to carbon free SiO2 on SiC. Applied Physics Letters, Vol.94 (No.10). Article: 103510. ISSN 0003-6951

Guy, O. J., Pérez-Tomás, Amador, Jennings, M. R., Lodzinski, M., Castaing, A., Mawby, P. A. (Philip A.), Covington, James A., 1973-, Wilks, S. P., Hammond, R., Connolly, D., Jones, S., Hopkins, J., Wilby, T., Rimmer, N., Baker, K., Conway, S. and Evans, S. (2009) Investigation of Si/4H-SiC hetero-junction growth and electrical properties. In: 7th European Conference on Silicon Carbide and Related Materials, Barcelona, Spain, September 07-11, 2008. Published in: Materials Science Forum, Vol.615-617 pp. 443-446.

Bryant, Angus T., Jennings, M. R., Parker-Allotey, Nii-Adotei, Mawby, P. A. (Philip A.), Pérez-Tomás, Amador, Brosselard, P., Godignon, P., Jorda, X., Milian, J., Palmer, P. R., Santi, E. and Hudgins, J. L. (2009) Physical modelling of large area 4H-SiC PiN diodes. In: IEEE Energy Conversion Congress and Exposition, San Jose, CA, September 20-24, 2009. Published in: 2009 IEEE Energy Conversion Congress and Exposition, Vols. 1-6 pp. 494-501.

Gammon, P. M., Pérez-Tomás, Amador, Jennings, M. R., Roberts, G. J., Davis, M. C., Shah, Vishal Ajit, Burrows, S. E. (Susan E.), Wilson, Neil Richard, 1977-, Covington, James A., 1973- and Mawby, P. A. (Philip A.). (2008) Characterization of n-n Ge/SiC heterojunction diodes. Applied Physics Letters, Vol.93 (No.11). Article: 112104. ISSN 0003-6951

Jennings, M. R., Pérez-Tomás, Amador, Guy, O. J., Hammond, Richard, Burrows, S. E. (Susan E.), Gammon, P. M., Lodzinski, M., Covington, James A., 1973- and Mawby, P. A. (Philip A.). (2008) Si/SiC heterojunctions fabricated by direct wafer bonding. Electrochemical and Solid State Letters, Vol.11 (No.11). H306-H308. ISSN 1099-0062

Pérez-Tomás, Amador, Jennings, M. R., Mawby, P. A. (Philip A.), Millan, J., Godignon, P., Montserrat, Josep, Rossinyol, E., Vennegues, P. and Stoemenos, J.. (2008) Interfacial properties of thermally oxidized Ta2Si on Si. Surface and Interface Analysis, Volume 40 (Number 8). pp. 1164-1167. ISSN 0142-2421

Pérez-Tomás, Amador, Jennings, M. R., Gammon, P. M., Roberts, G. J., Mawby, P. A. (Philip A.), Millan, J., Godignon, P., Montserrat, J. and Mestres, N.. (2008) SiC MOSFETs with thermally oxidized Ta2Si stacked on SiO2 as high-k gate insulator. Microelectronic Engineering, Volume 85 (Number 4). pp. 704-709. ISSN 0167-9317

Jennings, M. R., Pérez-Tomás, Amador, Gammon, P. M., Davis, M., Chow, T. P. and Mawby, P. A. (Philip A.) (2008) Layered metal and highly doped MBE Si contacts for 4H-SiC power devices. In: 9th International Seminar on Power Semiconductors (ISPS 2008) , Prague, Czech Republic, Aug 27-29, 2008. Published in: IET Digest, Vol.2008 (No.2). pp. 69-72.

Guy, Owen J., Lodzinski, Michal, Castaing, Ambroise, Igic, P. M., Pérez-Tomás, Amador, Jennings, Michael R. and Mawby, P. A. (Philip A.) (2008) Silicon carbide Schottky diodes and MOSFETs: solutions to performance problems. In: 13th International Power Electronics and Motion Control Conference, Poznan, Poland, Sep 01-03, 2008. Published in: Proceedings of the 13th International Power Electronics and Motion Control Conference, Vol.1-5 pp. 2464-2471.

Pérez-Tomás, Amador, Jennings, M. R., Davis, M., Shah, V., Grasby, T., Covington, James A., 1973- and Mawby, P. A. (Philip A.). (2007) High doped MBE Si p-n and n-n heterojunction diodes on 4H-SiC. MICROELECTRONICS JOURNAL, 38 (12). pp. 1233-1237. ISSN 0026-2692

Pérez-Tomás, Amador, Jennings, M. R., Davis, M. C., Covington, James A., 1973-, Mawby, P. A. (Philip A.), Shah, V. and Grasby, T.. (2007) Characterization and modeling of n-n Si/SiC heterojunction diodes. Journal of Applied Physics, Vol.102 (No.1). Article: 014505. ISSN 0021-8979

Jennings, M. R., Pérez-Tomás, Amador, Davies, M., Walker, D., Zhu, L., Losee, P., Huang, W., Balachandran, S., Guy, O. J., Covington, James A., 1973-, Chow, T. P. and Mawby, P. A. (Philip A.). (2007) Analysis of Al/Ti, Al/Ni multiple and triple layer contacts to p-type 4H-SiC. Solid-State Electronics, Vol.51 (No.5). pp. 797-801. ISSN 0038-1101

Jennings, M. R., Pérez-Tomás, Amador, Walker, D., Zhu, L., Losee, P., Huang, W., Balachandran, S., Guy, O. J., Covington, James A., 1973-, Chow, T. P. and Mawby, P. A. (Philip A.) (2007) Development of low resistance Al/Ti stacked metal contacts to p-type 4H-SiC. In: 6th European Conference on Silicon Carbide and Related Materials, Newcastle upon Tyne, ENGLAND, SEP, 2006. Published in: Silicon Carbide and Related Materials 2006, 556-557 pp. 697-700.

Mawby, P. A. (Philip A.), Pérez-Tomás, Amador, Jennings, M. R., Davis, M., Covington, James A., 1973-, Shah, V. and Grasby, T. (2007) Molecular beam epitaxy Si/4H-SiC heterojunction diodes. In: 14th International Workshop on the Physics of Semiconductor Devices, Indian Inst Technol, Mumbai, INDIA, DEC 17-20, 2007. Published in: PROCEEDINGS OF THE 2007 INTERNATIONAL WORKSHOP ON THE PHYSICS OF SEMICONDUCTOR DEVICES: IWPSD-2007 pp. 775-780.

Pérez-Tomás, Amador, Jennings, M. R., Mawby, P. A. (Philip A.), Covington, James A., 1973-, Godignon, P., Millan, J. and Mestres, N. (2007) SiC MOSFET channel mobility dependence on substrate doping and temperature considering high density of interface traps. In: 6th European Conference on Silicon Carbide and Related Materials, Newcastle upon Tyne, ENGLAND, SEP, 2006. Published in: Silicon Carbide and Related Materials 2006, 556-557 pp. 835-838.

Pérez-Tomás, Amador, Brosselard, P., Godignon, P., Millan, J., Mestres, N., Jennings, M. R., Covington, James A., 1973- and Mawby, P. A. (Philip A.). (2006) Field-effect mobility temperature modeling of 4H-SiC metal-oxide-semiconductor transistors. JOURNAL OF APPLIED PHYSICS, 100 (11). ISSN 0021-8979