2017

Hamilton, Dean P., Jennings, M. R. (Michael R.), Pérez-Tomás, Amador, Russell, Stephen, Hindmarsh, Steven A., Fisher, Craig A. and Mawby, P. A. (Philip A.) (2017) High temperature electrical and thermal aging performance and application considerations for SiC power DMOSFETs. IEEE Transactions on Power Electronics, 32 (10). pp. 7967-7978.

Russell, Stephen, Pérez-Tomás, Amador, McConville, C. F., Fisher, Craig A., Hamilton, Dean P., Mawby, P. A. (Philip A.) and Jennings, Michael R. (2017) Heteroepitaxial beta-Ga2O3 on 4H-SiC for an FET with reduced self heating. Journal of the Electron Devices Society, 5 (4). pp. 256-261.

Russell, Stephen, Jennings, M. R. (Michael R.), Dai, Tianxiang, Li, Fan, Hamilton, Dean P., Fisher, Craig A., Sharma, Yogesh K., Mawby, P. A. (Philip A.) and Pérez-Tomás, Amador (2017) Functional oxide as an extreme high-k dielectric towards 4H-SiC MOSFET incorporation. Materials Science Forum, 897 . pp. 155-158. doi:10.4028/www.scientific.net/MSF.897.155

Li, Fan, Vavasour, O., Walker, Marc, Martin, David, Sharma, Yogesh K., Russell, Stephen, Jennings, M. R., Pérez-Tomás, Amador and Mawby, P. A. (Philip A.) (2017) Physical characterisation of 3C-SiC(001)/SiO2 interface using XPS. Materials Science Forum, 897 . pp. 151-154. doi:10.4028/www.scientific.net/MSF.897.151

Woodend, Lee, Gammon, P. M., Shah, Vishal, Pérez-Tomás, Amador, Li, Fan, Hamilton, Dean P., Myronov, Maksym and Mawby, P. A. (Philip A.) (2017) Cryogenic characterisation and modelling of commercial SiC MOSFETs. Materials Science Forum, 897 . pp. 557-560. doi:10.4028/www.scientific.net/MSF.897.557

2016

Hamilton, Dean P., Jennings, Michael R., Pérez-Tomás, Amador, Russell, Stephen A. O., Hindmarsh, Steven A., Fisher, Craig A. and Mawby, P. A. (Philip A.) (2016) High temperature electrical and thermal aging performance and application considerations for SiC power DMOSFETs. IEEE Transactions on Power Electronics, 32 (10). pp. 7967-7979. doi:10.1109/TPEL.2016.2636743

Li, Fan, Sharma, Yogesh K., Jennings, M. R., Pérez-Tomás, Amador, Shah, V. A., Rong, Hua, Russell, Stephen, Martin, David and Mawby, P. A. (Philip A.) (2016) Improved channel mobility by oxide nitridation for N-Channel MOSFET on 3C-SiC(100)/Si. Materials Science Forum, 858 . pp. 667-670. doi:10.4028/www.scientific.net/MSF.858.667

Li, Fan, Sharma, Yogesh K., Walker, David, Hindmarsh, Steven A., Jennings, Michael, Martin, David, Fisher, Craig A., Gammon, P. M., Pérez-Tomás, Amador and Mawby, P. A. (2016) 3C-SiC transistor with Ohmic contacts defined at room temperature. IEEE Electron Device Letters . doi:10.1109/LED.2016.2593771

2015

Sharma, Yogesh K., Li, Fan, Jennings, M. R., Fisher, Craig A., Pérez-Tomás, Amador, Thomas, Stephen M., Hamilton, Dean P., Russell, Stephen and Mawby, P. A. (2015) High-temperature (1200–1400°C) dry oxidation of 3C-SiC on silicon. Journal of Electronic Materials, 44 (11). pp. 4167-4174. doi:10.1007/s11664-015-3949-4

Li, Fan, Sharma, Yogesh K., Shah, V. A., Jennings, M. R., Pérez-Tomás, Amador, Myronov, Maksym, Fisher, Craig A., Leadley, D. R. (David R.) and Mawby, P. A. (Philip A.) (2015) Electrical activation of nitrogen heavily implanted 3C-SiC(100). Applied surface science . doi:10.1016/j.apsusc.2015.06.169 (In Press)

Chan, Chun Wa, Gammon, P. M., Shah, V. A., Chen, Han, Jennings, M. R., Fisher, Craig A., Pérez-Tomás, Amador, Myronov, Maksym and Mawby, P. A. (Philip A.) (2015) Simulations of a lateral PiN diode on SiSiC substrate for high temperature applications. Materials Research Forum, 821 (7). pp. 624-627. doi: 10.4028/www.scientific.net/MSF.821-823.624

Pérez-Tomás, Amador, Catalàn, G., Fontserè, A., Iglesias, V., Chen, Han, Gammon, P. M., Jennings, M. R., Thomas, M., Fisher, Craig A., Sharma, Yogesh K., Placidi, M., Chmielowska, M., Chenot, S., Porti, M., Nafría, M. and Cordier, Y. (2015) Nanoscale conductive pattern of the homoepitaxial AlGaN/GaN transistor. Nanotechnology, 26 (11). pp. 1-10. 115203.

2014

Fisher, Craig A., Jennings, M. R., Sharma, Yogesh K., Hamilton, Dean P., Gammon, P. M., Pérez-Tomás, Amador, Thomas, Stephen M., Burrows, S. E. (Susan E.) and Mawby, P. A. (Philip A.) (2014) Improved performance of 4H-SiC PiN diodes using a novel combined high temperature oxidation and annealing process. IEEE Transactions on Semiconductor Manufacturing, Volume 27 (Number 3). pp. 443-451. doi:10.1109/TSM.2014.2336701

Fisher, Craig A., Jennings, M. R., Sharma, Yogesh K., Hamilton, Dean P., Li, Fan, Gammon, P. M., Pérez-Tomás, Amador, Thomas, Stephen M., Burrows, S. E. (Susan E.) and Mawby, P. A. (Philip A.) (2014) On the application of novel high temperature oxidation processes to enhance the performance of high voltage silicon carbide PiN diodes. In: 2014 16th European Conference on Power Electronics and Applications (EPE'14-ECCE Europe), , Finland, 26-28 Aug 2014. Published in: 2014 16th European Conference on Power Electronics and Applications (EPE'14-ECCE Europe), pp. 1-9. doi:10.1109/EPE.2014.6910738

Thomas, S. M., Sharma, Yogesh K., Crouch, M. A., Fisher, Craig A., Pérez-Tomás, Amador, Jennings, M. R. and Mawby, P. A. (Philip A.) (2014) Enhanced field effect mobility on 4H-SiC by oxidation at 1500◦C. IEEE Journal of the Electron Devices Society, 2 (5). pp. 114-117.

Jennings, M. R., Fisher, Craig A., Walker, David, Sanchez, Ana M., Pérez-Tomás, Amador, Hamilton, Dean P., Gammon, P. M., Burrows, S. E. (Susan E.), Thomas, Stephen M., Sharma, Yogesh K., Li, Fan and Mawby, P. A. (Philip A.) (2014) On the Ti3SiC2 metallic phase formation for robust p-type 4H-SiC ohmic contacts. Materials Science Forum, Volume 778-780 . pp. 693-696. doi:10.4028/www.scientific.net/MSF.778-780.693

Gammon, P. M., Fisher, Craig A., Shah, V. A., Jennings, M. R., Pérez-Tomás, Amador, Burrows, S. E. (Susan E.), Myronov, Maksym, Leadley, D. R. (David R.) and Mawby, P. A. (Philip A.) (2014) The cryogenic testing and characterisation of SiC diodes. Materials Science Forum, 778-780 . pp. 863-866. doi:10.4028/www.scientific.net/MSF.778-780.863

2013

Gammon, P. M., Pérez-Tomás, Amador, Shah, V. A., Vavasour, O., Donchev, E., Pang, J. S., Myronov, Maksym, Fisher, Craig A., Jennings, M. R., Leadley, D. R. (David R.) and Mawby, P. A. (Philip A.) (2013) Modelling the inhomogeneous SiC Schottky interface. Journal of Applied Physics, Volume 114 (Number 22). Article number 223704. doi:10.1063/1.4842096

Gammon, P. M., Pérez-Tomás, Amador, Jennings, M. R., Sanchez, Ana M., Fisher, Craig A., Thomas, Stephen M., Donnellan, Benedict T. and Mawby, P. A. (Philip A.) (2013) Bipolar conduction across a wafer bonded p-n Si/SiC heterojunction. Materials Science Forum, 740-742 . pp. 1006-1009. doi:10.4028/www.scientific.net/MSF.740-742.1006

Pérez-Tomás, Amador, Fontserè, A., Sánchez, S., Jennings, M. R., Gammon, P. M. and Cordier, Y. (2013) Gate traps inducing band-bending fluctuations on AlGaN/GaN heterojunction transistors. Applied Physics Letters, Volume 102 (Number 2). Article number 023511. doi:10.1063/1.4788722

Jennings, M. R., Pérez-Tomás, Amador, Severino, Andrea, Ward, Peter J., Bashir, Arif, Fisher, Craig A., Thomas, Stephen M., Gammon, P. M., Donnellan, Benedict T., Rong, Hua, Hamilton, Dean P. and Mawby, P. A. (Philip A.) (2013) Innovative 3C-SiC on SiC via direct wafer bonding. In: 9th European Conference on Silicon Carbide and Related Materials, ECSCRM 2012, St. Petersburg, Russian Federation, 2 - 6 Sept 2012. Published in: Materials Science Forum, 740-742 pp. 271-274. ISBN 978-303785624-6. ISSN 1662-9752. doi:10.4028/www.scientific.net/MSF.740-742.271

Gammon, P. M., Pérez-Tomás, Amador, Jennings, M. R., Sanchez, Ana M., Fisher, Craig A., Thomas, Stephen M., Donnellan, Benedict T. and Mawby, P. A. (Philip A.) (2013) Bipolar conduction across a wafer bonded p-n Si/SiC heterojunction. In: 9th European Conference on Silicon Carbide and Related Materials, ECSCRM 2012, St. Petersburg, Russian Federation, 2 - 6 Sept 2012. Published in: Materials Science Forum, Volume 740-742 pp. 1006-1009. ISSN 1662-9752. doi:10.4028/www.scientific.net/MSF.740-742.1006

Pérez-Tomás, Amador, Fontserè, A., Jennings, M. R. and Gammon, P. M. (2013) Modeling the effect of thin gate insulators (SiO2, SiN, Al2O3 and HfO2) on AlGaN/GaN HEMT forward characteristics grown on Si, sapphire and SiC. Materials Science in Semiconductor Processing, Volume 16 (Number 5). pp. 1336-1345. doi:10.1016/j.mssp.2012.10.014

Gammon, P. M., Pérez-Tomás, Amador, Shah, V. A., Vavasour, O., Donchev, E., Pang, J. S., Myronov, Maksym, Fisher, Craig A., Jennings, M. R., Leadley, D. R. (David R.) and Mawby, P. A. (Philip A.) (2013) Modelling the inhomogeneous SiC Schottky interface. Journal of Applied Physics, 114 (22). p. 223704. 223704. doi:10.1063/1.4842096

Pérez-Tomás, Amador, Fontserè, A., Placidi, M., Jennings, M. R. and Gammon, P. M. (2013) Modelling the metal–semiconductor band structure in implanted ohmic contacts to GaN and SiC. Modelling and Simulation in Materials Science and Engineering, Volume 21 (Number 3). Article number 035004. doi:10.1088/0965-0393/21/3/035004

2012

Gammon, P. M., Donchev, E., Pérez-Tomás, Amador, Shah, V. A., Pang, J. S., Petrov, P. K. (Peter K.), Jennings, M. R., Fisher, Craig A., Mawby, P. A. (Philip A.), Leadley, D. R. (David R.) and Alford, Neil McN. (2012) A study of temperature-related non-linearity at the metal-silicon interface. Journal of Applied Physics, Vol.112 . 114513 . doi:http://dx.doi.org/10.1063/1.4768718

Fontserè, A., Pérez-Tomás, Amador, Placidi, M., Llobet, J., Baron, N., Chenot, S., Cordier, Y., Moreno, J. C., Jennings, M. R., Gammon, P. M., Fisher, Craig A., Iglesias, V., Porti, M., Bayerl, A., Lanza, M. and Nafría, M. (2012) Nanoscale investigation of AlGaN/GaN-on-Si high electron mobility transistors. Nanotechnology, Vol.23 (No.39). Article no. 395204. doi:10.1088/0957-4484/23/39/395204

Jennings, M. R., Pérez-Tomás, Amador, Bashir, A., Sanchez, Ana M., Severino, A., Ward, Peter J., Thomas, S. M., Fisher, Craig A., Gammon, P. M., Zabala, M., Burrows, S. E., Donnellan, B., Hamilton, D. P., Walker, David and Mawby, P. A. (2012) Bow free 4'' diameter 3C-SiC Epilayers formed upon wafer-bonded Si/SiC substrates. ECS Solid State Letters, Volume 1 (Number 6). P85-P88. doi:10.1149/2.007206ssl

Fisher, Craig A., Jennings, M. R., Bryant, Angus T., Pérez-Tomás, Amador, Gammon, P. M., Brosselard, Pierre, Godignon, Phillippe and Mawby, P. A. (Philip A.) (2012) Physical modelling of 4H-SiC PiN diodes. Materials Science Forum, Volume 717-720 . pp. 993-996. doi:10.4028/www.scientific.net/MSF.717-720.993

2011

Pérez-Tomás, Amador, Placidi, Marcel, Fontserè, A., Gammon, P. M. and Jennings, M. R. (2011) Temperature behavior and modeling of ohmic contacts to Si+ implanted n-type GaN. Microelectronics Reliability, Vol.51 (No.8). pp. 1325-1329. doi:10.1016/j.microrel.2011.03.023

Gammon, P. M., Pérez-Tomás, Amador, Jennings, M. R., Guy, O. J., Rimmer, N., Llobet, J., Mestres, Narcis, Godignon, P., Placidi, Marcel, Zabala, M., Covington, James A. and Mawby, P. A. (2011) Characterisation of HfO2/Si/SiC MOS capacitors. Materials Science Forum, Vol.679-680 . pp. 674-677. doi:10.4028/www.scientific.net/MSF.679-680.674

Fontserè, A., Pérez-Tomás, Amador, Placidi, M., Llobet, J., Baron, N., Chenot, S., Cordier, Y., Moreno, J. C., Gammon, P. M., Jennings, M. R., Porti, M., Bayerl, A., Lanza, M. and Nafría, M. (2011) Micro and nano analysis of 0.2 Ω mm Ti/Al/Ni/Au ohmic contact to AlGaN/GaN. Applied Physics Letters, Vol.99 (No.21). article no. 213504. doi:10.1063/1.3661167

Pérez-Tomás, Amador, Fontserè, A., Placidi, Marcel, Baron, N., Chenot, Sébastien, Cordier, Yvon, Moreno, J.C., Gammon, P. M. and Jennings, M. R. (2011) Ohmic contact resistance to GaN devices dependence with on temperature for GaN devices. In: 8th European Conference on Silicon Carbide and Related Materials (ECSCRM 2010), Oslo, Norway, Aug 29 - Sep 2, 2010. Published in: Materials Science Forum, Vol. 679-680 pp. 816-819. ISSN 0255-5476. doi:10.4028/www.scientific.net/MSF.679-680.816

Fontserè, A., Pérez-Tomás, Amador, Placidi, M., Fernández-Martínez, P., Baron, N., Chenot, S., Cordier, Y., Moreno, J.C., Gammon, P. M. and Jennings, M. R. (2011) Temperature dependence of Al/Ti-based Ohmic contact to GaN devices : HEMT and MOSFET. Microelectronic Engineering, Vol.88 (No.10). pp. 3140-3144. doi:10.1016/j.mee.2011.06.015

2010

Gammon, P. M., Pérez-Tomás, Amador, Jennings, M. R., Guy, O. J., Rimmer, N., Llobet, J., Mestres, N., Godignon, P., Placidi, M., Zabala, M., Covington, James A. and Mawby, P. A. (2010) Integration of HfO2 on Si/SiC heterojunctions for the gate architecture of SiC power devices. Applied Physics Letters, Vol.97 (No.1). 013506. doi:10.1063/1.3462932

Gammon, P. M., Pérez-Tomás, Amador, Jennings, M. R., Shah, V. A., Boden, S. A., Davis, M. C., Burrows, S. E., Wilson, Neil R., Roberts, G. J., Covington, James A. and Mawby, P. A. (2010) Interface characteristics of n-n and p-n Ge/SiC heterojunction diodes formed by molecular beam epitaxy deposition. Journal of Applied Physics, Vol.107 (No.12). p. 124512. doi:10.1063/1.3449057

Gammon, P. M., Pérez-Tomás, Amador, Jennings, M. R., Roberts, G. J., Shah, V. A., Covington, James A. and Mawby, P. A. (2010) Germanium-silicon carbide heterojunction diodes - a study in device characteristics with increasing layer thickness and deposition temperature. In: 13th International Conference on Silicon Carbide and Related Materials, Nurnberg, Germany, October 11-16, 2009. Published in: Materials Science Forum, Vol.645-648 pp. 889-892. ISBN *****************. ISSN 0255-5476. doi:10.4028/www.scientific.net/MSF.645-648.889

Pérez-Tomás, Amador, Jennings, M. R., Gammon, P. M., Shah, V. A., Mawby, P. A. (Philip A.), Guy, O. J. and Hammond, R. (2010) Si on SiC, a novel platform for MOS power devices. In: 40th European Solid State Device Research Conference (ESSDERC), Seville, Spain, Sep 13-17, 2010

Jennings, M. R., Pérez-Tomás, Amador, Guy, O. J., Lodzinski, M., Gammon, P. M., Burrows, S., Covington, James A. and Mawby, P. A. (2010) Silicon-on-SiC, a novel semiconductor structure for power devices. In: 13th International Conference on Silicon Carbide and Related Materials, Nurnberg, Germany, October 11-16, 2009. Published in: Materials Science Forum, Vol.645-648 pp. 1243-1246. ISSN 0255-5476. doi:10.4028/www.scientific.net/MSF.645-648.1243

2009

Gammon, P. M., Pérez-Tomás, Amador, Shah, V. A., Roberts, G. J., Jennings, M. R., Covington, James A. and Mawby, P. A. (2009) Analysis of inhomogeneous Ge/SiC heterojunction diodes. Journal of Applied Physics, Vol.106 (No.9). Article no. 093708. doi:10.1063/1.3255976

Tong, C. F., Mawby, P. A., Covington, James A. and Pérez-Tomás, Amador (2009) Investigation on split-gate RSO MOSFET for 30V breakdown. In: 9th International Seminar on Power Semiconductors 2008 (ISPS 2008), Prague, Czech Republic, Aug 27-29, 2008. Published in: Proceedings of the 9th International Seminar on Power Semiconductors 2008 (ISPS 2008) pp. 97-102.

Pérez-Tomás, Amador, Lodzinski, M., Guy, O. J., Jennings, M. R., Placidi, M., Llobet, J., Gammon, P. M., Davis, M. C., Covington, James A., Burrows, S. E. and Mawby, P. A. (2009) Si/SiC bonded wafer: a route to carbon free SiO2 on SiC. Applied Physics Letters, Vol.94 (No.10). Article: 103510. doi:10.1063/1.3099018

Guy, O. J., Pérez-Tomás, Amador, Jennings, M. R., Lodzinski, M., Castaing, A., Mawby, P. A., Covington, James A., Wilks, S. P., Hammond, R., Connolly, D., Jones, S., Hopkins, J., Wilby, T., Rimmer, N., Baker, K., Conway, S. and Evans, S. (2009) Investigation of Si/4H-SiC hetero-junction growth and electrical properties. In: 7th European Conference on Silicon Carbide and Related Materials, Barcelona, Spain, September 07-11, 2008. Published in: Materials Science Forum, Vol.615-617 pp. 443-446. ISBN *****************. ISSN 1662-9752. doi:10.4028/www.scientific.net/MSF.615-617.443

Bryant, Angus T., Jennings, M. R., Parker-Allotey, Nii-Adotei, Mawby, P. A. (Philip A.), Pérez-Tomás, Amador, Brosselard, P., Godignon, P., Jorda, X., Milian, J., Palmer, P. R., Santi, E. and Hudgins, J. L. (2009) Physical modelling of large area 4H-SiC PiN diodes. In: IEEE Energy Conversion Congress and Exposition, San Jose, CA, September 20-24, 2009. Published in: 2009 IEEE Energy Conversion Congress and Exposition, Vols. 1-6 pp. 494-501. ISBN 978-1-4244-2892-2. doi:10.1109/ECCE.2009.5316233

2008

Gammon, P. M., Pérez-Tomás, Amador, Jennings, M. R., Roberts, G. J., Davis, M. C., Shah, V. A., Burrows, S. E., Wilson, Neil R., Covington, James A. and Mawby, P. A. (2008) Characterization of n-n Ge/SiC heterojunction diodes. Applied Physics Letters, Vol.93 (No.11). Article: 112104. doi:10.1063/1.2987421

Jennings, M. R., Pérez-Tomás, Amador, Guy, O. J., Hammond, Richard, Burrows, S. E., Gammon, P. M., Lodzinski, M., Covington, James A. and Mawby, P. A. (2008) Si/SiC heterojunctions fabricated by direct wafer bonding. Electrochemical and Solid State Letters, Vol.11 (No.11). H306-H308. doi:10.1149/1.2976158

Pérez-Tomás, Amador, Jennings, M. R., Mawby, P. A. (Philip A.), Millan, J., Godignon, P., Montserrat, Josep, Rossinyol, E., Vennegues, P. and Stoemenos, J. (2008) Interfacial properties of thermally oxidized Ta2Si on Si. Surface and Interface Analysis, Volume 40 (Number 8). pp. 1164-1167. doi:10.1002/sia.2859

Pérez-Tomás, Amador, Jennings, M. R., Gammon, P. M., Roberts, G. J., Mawby, P. A. (Philip A.), Millan, J., Godignon, P., Montserrat, J. and Mestres, N. (2008) SiC MOSFETs with thermally oxidized Ta2Si stacked on SiO2 as high-k gate insulator. Microelectronic Engineering, Volume 85 (Number 4). pp. 704-709. doi:10.1016/j.mee.2007.12.073

Jennings, M. R., Pérez-Tomás, Amador, Gammon, P. M., Davis, M., Chow, T. P. and Mawby, P. A. (Philip A.) (2008) Layered metal and highly doped MBE Si contacts for 4H-SiC power devices. In: 9th International Seminar on Power Semiconductors (ISPS 2008) , Prague, Czech Republic, Aug 27-29, 2008. Published in: IET Digest, Vol.2008 (No.2). pp. 69-72. doi:10.1049/ic:20080185

Guy, Owen J., Lodzinski, Michal, Castaing, Ambroise, Igic, P. M., Pérez-Tomás, Amador, Jennings, M. R. and Mawby, P. A. (Philip A.) (2008) Silicon carbide Schottky diodes and MOSFETs: solutions to performance problems. In: 13th International Power Electronics and Motion Control Conference, Poznan, Poland, Sep 01-03, 2008. Published in: Proceedings of the 13th International Power Electronics and Motion Control Conference, Vol.1-5 pp. 2464-2471. doi:10.1109/EPEPEMC.2008.4635633

2007

Pérez-Tomás, Amador, Jennings, M. R., Davis, M., Shah, V. A., Grasby, T., Covington, James A. and Mawby, P. A. (2007) High doped MBE Si p-n and n-n heterojunction diodes on 4H-SiC. MICROELECTRONICS JOURNAL, 38 (12). pp. 1233-1237. doi:10.1016/j.mejo.2007.09.019

Pérez-Tomás, Amador, Jennings, M. R., Davis, M. C., Covington, James A., Mawby, P. A., Shah, V. A. and Grasby, T. (2007) Characterization and modeling of n-n Si/SiC heterojunction diodes. Journal of Applied Physics, Vol.102 (No.1). Article: 014505. doi:10.1063/1.2752148

Jennings, M. R., Pérez-Tomás, Amador, Davies, M., Walker, David, Zhu, L., Losee, P., Huang, W., Balachandran, S., Guy, O. J., Covington, James A., Chow, T. P. and Mawby, P. A. (2007) Analysis of Al/Ti, Al/Ni multiple and triple layer contacts to p-type 4H-SiC. Solid-State Electronics, Vol.51 (No.5). pp. 797-801. doi:10.1016/j.sse.2007.02.037

Jennings, M. R., Pérez-Tomás, Amador, Walker, D., Zhu, L., Losee, P., Huang, W., Balachandran, S., Guy, O. J., Covington, James A., Chow, T. P. and Mawby, P. A. (2007) Development of low resistance Al/Ti stacked metal contacts to p-type 4H-SiC. In: 6th European Conference on Silicon Carbide and Related Materials, Newcastle upon Tyne, UK, Sep 2006. Published in: Silicon Carbide and Related Materials 2006 : ECSCRM 2006 , 556-557 pp. 697-700. ISBN 9780878494422. ISSN 0255-5476.

Mawby, P. A., Pérez-Tomás, Amador, Jennings, M. R., Davis, M., Covington, James A., Shah, V. A. and Grasby, T. (2007) Molecular beam epitaxy Si/4H-SiC heterojunction diodes. In: 14th International Workshop on the Physics of Semiconductor Devices, Indian Inst Technol, Mumbai, India, 16-20 Dec 2007. Published in: International Workshop on Physics of Semiconductor Devices, 2007. IWPSD 2007 pp. 775-780. ISBN 9781424417278. doi:10.1109/IWPSD.2007.4472633

Pérez-Tomás, Amador, Jennings, M. R., Mawby, P. A., Covington, James A., Godignon, P., Millan, J. and Mestres, N. (2007) SiC MOSFET channel mobility dependence on substrate doping and temperature considering high density of interface traps. In: 6th European Conference on Silicon Carbide and Related Materials, Newcastle upon Tyne, UK, 3-7 Sep 2006. Published in: Silicon Carbide and Related Materials 2006 : ECSCRM 2006 , Volume 556-557 pp. 835-838. ISSN 0255-5476.

2006

Pérez-Tomás, Amador, Brosselard, P., Godignon, P., Millan, J., Mestres, N., Jennings, M. R., Covington, James A. and Mawby, P. A. (2006) Field-effect mobility temperature modeling of 4H-SiC metal-oxide-semiconductor transistors. JOURNAL OF APPLIED PHYSICS, 100 (11). doi:10.1063/1.2395597