2019

Vavasour, Oliver J., Jefferies, Richard, Walker, Marc, Roberts, Joseph W., Meakin, Naomi R., Gammon, P. M., Chalker, Paul R and Ashley, Tim (2019) Data for Effect of HCl cleaning on InSb–Al2O3 MOS capacitors. [Dataset]

Vavasour, Oliver J., Jefferies, Richard, Walker, Marc, Roberts, Joseph W., Meakin, Naomi R., Gammon, P. M., Chalker, Paul R and Ashley, Tim (2019) Effect of HCl cleaning on InSb–Al2O3 MOS capacitors. Semiconductor Science and Technology, 34 (3). 035032. doi:10.1088/1361-6641/ab0331

2014

Stachel, S., Budkin, G. V., Hagner, U., Bel'kov, V. V., Glazov, M. M., Tarasenko, S. A., Clowes, S. K., Ashley, Tim, Gilbertson, A. M. and Ganichev, S. D. (2014) Cyclotron-resonance-assisted photon drag effect in InSb/InAlSb quantum wells excited by terahertz radiation. Physical Review B (Condensed Matter and Materials Physics), 89 (11). 115435. doi:10.1103/PhysRevB.89.115435

2013

Mudd, James J., Kybert, Nicholas J., Linhart, W. M., Buckle, L., Ashley, Tim, King, P. D. C., Jones, T. S. (Tim S.), Ashwin, M. J. and Veal, T. D. (Tim D.) (2013) Optical absorption by dilute GaNSb alloys : influence of N pair states. Applied Physics Letters, Volume 103 (Number 4). Article number 042110. doi:10.1063/1.4816519

2012

Stachel, S., Olbrich, P., Zoth, C., Hagner, U., Stangl, T., Karl, C., Lutz, Peter, Bel'kov, V., Clowes, S. K. (Steve K.), Ashley, Tim, Gilbertson, A. M. and Ganichev, S. D. (2012) Interplay of spin and orbital magnetogyrotropic photogalvanic effects in InSb/(Al,In)Sb quantum well structures. Physical Review B, Volume 85 (Number 4). 045305. doi:10.1103/PhysRevB.85.045305

Alexander-Webber, J. A., Baker, A. M. R., Buckle, P. D., Ashley, T. and Nicholas, R. J. (2012) High-current breakdown of the quantum Hall effect and electron heating in InSb/AlInSb. Physical Review B (Condensed Matter and Materials Physics), Volume 86 (Number 4). Article number 045404. doi:10.1103/PhysRevB.86.045404

2011

Gilbertson, A. M., Buckle, P. D., Emeny, M. T., Ashley, Tim and Cohen, L. F. (2011) Suppression of the parasitic buffer layer conductance in InSb/AlxIn1−xSb heterostructures using a wide-band-gap barrier layer. Physical Review B (Condensed Matter and Materials Physics), Volume 84 (Number 7). Article number 075474. doi:10.1103/PhysRevB.84.075474

Gilbertson, A. M., Fearn, M., Kormányos, A., Read, D. E., Lambert, C. J., Emeny, M. T., Ashley, Tim, Solin, S. A. and Cohen, L. F. (2011) Ballistic transport and boundary scattering in InSb/In1−xAlxSb mesoscopic devices. Physical Review B (Condensed Matter and Materials Physics), Volume 83 (Number 7). Article number 075304. doi:10.1103/PhysRevB.83.075304

Leontiadou, M. A., Litvinenko, K. L., Gilbertson, A. M., Pidgeon, C. R., Branford, W. R., Cohen, L. F., Fearn, M., Ashley, Tim, Emeny, M. T., Murdin, B. N. and Clowes, S. K. (2011) Experimental determination of the Rashba coefficient in InSb/InAlSb quantum wells at zero magnetic field and elevated temperatures. Journal of Physics: Condensed Matter, Volume 23 (Number 3). Article number 035801. doi:10.1088/0953-8984/23/3/035801

Gilbertson, A. M., Kormányos, A., Buckle, P. D., Fearn, M., Ashley, T., Lambert, C. J., Solin, S. A. and Cohen, L. F. (2011) Room temperature ballistic transport in InSb quantum well nanodevices. Applied Physics Letters, Vol. 99 (No. 24). p. 242101. doi:10.1063/1.3668107

Gilbertson, A. M., Benstock, D., Fearn, M., Kormányos, A., Ladak, S., Emeny, M. T., Lambert, C. J., Ashley, T., Solin, S. A. and Cohen, L. F. (2011) Sub-100-nm negative bend resistance ballistic sensors for high spatial resolution magnetic field detection. Applied Physics Letters, Vol. 98 (No. 6). 062106. doi:10.1063/1.3554427

2010

Pooley, O. J., Gilbertson, A. M., Buckle, P. D., Hall, R. S., Emeny, M. T., Fearn, M., Halsall, M. P., Cohen, L. F. and Ashley, Tim (2010) Quantum well mobility and the effect of gate dielectrics in remote doped InSb/AlxIn1 −xSb heterostructures. Semiconductor Science and Technology, Volume 25 (Number 12). Article number 125005. doi:10.1088/0268-1242/25/12/125005

Pooley, O. J., Gilbertson, A. M., Buckle, P. D., Hall, R. S., Buckle, L., Emeny, M. T., Fearn, M., Cohen, L. F. and Ashley, Tim (2010) Transport effects in remote-doped InSb/AlxIn1-xSb heterostructures. New Journal of Physics, Volume 12 (Number 5). Article number 053022. doi:10.1088/1367-2630/12/5/053022

Litvinenko, K. L., Leontiadou, M. A., Li, Juerong, Clowes, S. K., Emeny, M. T., Ashley, Tim, Pidgeon, C. R., Cohen, L. F. and Murdin, B. N. (2010) Strong dependence of spin dynamics on the orientation of an external magnetic field for InSb and InAs. Applied Physics Letters, Volume 96 (Number 11). Article number 111107. doi:10.1063/1.3337111

Fox, Natasha E., Andreev, A. D., Nash, G. R., Ashley, Tim and Hosea, T. J. C. (2010) Room temperature spectroscopic characterization of mid-infrared GaInSb quantum-well laser structures. Semiconductor Science and Technology, Volume 25 (Number 3). Article number 035005. doi:10.1088/0268-1242/25/3/035005

Ashley, Tim, Emeny, M. T., Hayes, D. G., Hilton, K. P., Jefferies, R., Maclean, J. O., Smith, S. J., Tang, W. A., Webber, P. J. and Williams, G. M. (2010) High performance InSb QWFETs for low power dissipation millimetre wave applications. In: 2010 European Microwave Integrated Circuits Conference (EuMIC), Paris, France, 27-28 Sep 2010 pp. 158-161. ISBN 9781424472314.

2009

Nash, Geoffrey R., Forman, Hannah L., Smith, Stuart J., Robinson, Peter B., Buckle, Louise, Coomber, Stuart D., Emeny, Martin T., Gordon, Neil T. and Ashley, Tim (2009) Mid-infrared AlxIn1-xSb light-emitting diodes and photodiodes for hydrocarbon sensing. IEEE Sensors Journal, Volume 9 (Number 10). pp. 1240-1243. doi:10.1109/JSEN.2009.2029815

Gilbertson, A., Branford, W., Fearn, M., Buckle, L., Buckle, P., Ashley, Tim and Cohen, L. (2009) Zero-field spin splitting and spin-dependent broadening in high-mobility InSb/In1−xAlxSb asymmetric quantum well heterostructures. Physical Review B (Condensed Matter and Materials Physics), Volume 79 (Number 23). Article number 235333. doi:10.1103/PhysRevB.79.235333

Nash, G. R. and Ashley, T. (2009) Reduction in Shockley–Read–Hall generation-recombination in AlInSb light-emitting-diodes using spatial patterning of the depletion region. Applied Physics Letters, Vol.94 (No.21). Article: 213510. doi:10.1063/1.3147207

Pugh, J. R., Ho, Y-L. D., Heard, P. J., Nash, G. R., Ashley, Tim, Rarity, J. G. and Cryan, M. J. (2009) Design and fabrication of a midinfrared photonic crystal defect cavity in indium antimonide. Journal of Optics A: Pure and Applied Optics, Volume 11 (Number 5). Article number 054006. doi:10.1088/1464-4258/11/5/054006

Buckle, L., Coomber, S. D., Ashley, Tim, Jefferson, Paul Harvey, Walker, David, Veal, T. D., McConville, C. F. and Thomas, Pam A. (2009) Growth and characterisation of dilute antimonide nitride materials for long-wavelength applications. Microelectronics Journal, Vol.40 (No.3 Sp. Iss. SI). pp. 399-402. doi:10.1016/j.mejo.2008.06.007

Tenev, T., Palyi, A., Mirza, B., Nash, G., Fearn, M., Smith, S., Buckle, L., Emeny, M., Ashley, Tim, Jefferson, J. and Lambert, C. (2009) Energy level spectroscopy of InSb quantum wells using quantum-well LED emission. Physical Review B (Condensed Matter and Materials Physics), Volume 79 (Number 8). Article number 085301. doi:10.1103/PhysRevB.79.085301

Ashley, Tim, Emeny, M. T., Hayes, D. G., Hilton, K. P., Jefferies, R., Maclean, J. O., Smith, S. J., Tang, A. W-H., Wallis, D. J. and Webber, P. J. (2009) High-performance InSb based quantum well field effect transistors for low-power dissipation applications. In: 2009 IEEE International Electron Devices Meeting (IEDM), Baltimore, MD, 7-9 Dec 2009. Published in: 2009 IEEE International Electron Devices Meeting (IEDM) pp. 1-4. ISBN 9781424456390. doi:10.1109/IEDM.2009.5424207

Nash, G. R., Przeslak, S. J. B., Smith, S. J., de Valicourt, G., Andreev, A. D., Carrington, P. J., Yin, M., Krier, A., Coomber, S. D., Buckle, L., Emeny, M. T. and Ashley, Tim (2009) Mid-infrared GaInSb/AlGaInSb quantum well laser diodes. In: Conference on Lasers and Electro-Optics, 2009 and 2009 Conference on Quantum electronics and Laser Science Conference. CLEO/QELS 2009 , Baltimore, MD, 2-4 Jun 2009. Published in: Conference on Lasers and Electro-Optics, 2009 and 2009 Conference on Quantum electronics and Laser Science Conference. CLEO/QELS 2009 ISBN 9781557528698.

Nash, G. R., Przeslak, S. J. B., Smith, S. J., de Valicourt, G., Andreev, A. D., Carrington, P. J., Yin, M., Krier, A., Coomber, S. D., Buckle, L., Emeny, M. T. and Ashley, T. (2009) Midinfrared GaInSb/AlGaInSb quantum well laser diodes operating above 200 K. Applied Physics Letters, Vol. 94 (No. 9). 091111. doi:10.1063/1.3094879

2008

Mirza, B. I., Nash, G. R., Smith, S. J., Buckle, L., Coomber, S. D., Emeny, M. T. and Ashley, Tim (2008) Recombination processes in midinfrared Al[sub x]In[sub 1−x]Sb light-emitting diodes. Journal of Applied Physics, Volume 104 (Number 6). Article number 063113. doi:10.1063/1.2982374

Nedniyom, B., Nicholas, R., Emeny, M., Buckle, L., Gilbertson, A., Buckle, P. and Ashley, Tim (2008) Giant enhanced g-factors in an InSb two-dimensional gas. Physical Review B (Condensed Matter and Materials Physics), Volume 80 (Number 12). Article number 125328. doi:10.1103/PhysRevB.80.125328

Sharma, Tarun Kumar, Fox, Natasha Elizabeth, Hosea, Thomas Jeff Cockburn, Nash, Geoffrey Richard, Coomber, Stuart David, Buckle, Louise, Emeny, Martin Trevor and Ashley, Tim (2008) Room temperature observation of the energy levels of mid-infrared quantum well lasers using Fourier transform infrared-surface photovoltage spectroscopy. Applied Physics Express, Volume 1 (Number 6). Article number 062001. doi:10.1143/APEX.1.062001

Orr, J., Gilbertson, A., Fearn, M., Croad, O., Storey, C., Buckle, L., Emeny, M., Buckle, P. and Ashley, Tim (2008) Electronic transport in modulation-doped InSb quantum well heterostructures. Physical Review B (Condensed Matter and Materials Physics), Volume 77 (Number 16). Article number 165334. doi:10.1103/PhysRevB.77.165334

Litvinenko, K., Nikzad, L., Pidgeon, C., Allam, J., Cohen, L., Ashley, Tim, Emeny, M., Zawadzki, W. and Murdin, B. (2008) Temperature dependence of the electron Landé g factor in InSb and GaAs. Physical Review B (Condensed Matter and Materials Physics), Volume 77 (Number 3). Article number 033204. doi:10.1103/PhysRevB.77.033204

Lindsay, A., O’Reilly, E., Andreev, A. and Ashley, Tim (2008) Theory of conduction band structure of InNxSb1−x and GaNxSb1−x dilute nitride alloys. Physical Review B (Condensed Matter and Materials Physics), Volume 77 (Number 16). Article number 033204. doi:10.1103/PhysRevB.77.165205

Pugh, Jonathan R., Heard, Peter J., Nash, Geoff R., Ashley, Tim, Rarity, John G. and Cryan, Martin J. (2008) Design and fabrication of a mid infra-red photonic crystal defect laser in indium antimonide. In: Conference on Lasers and Electro-Optics, San Jose, California, United States, 4-9 May 2008. Published in: Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference and Photonic Applications Systems Technologies ISBN 9781557528599. doi:10.1109/CLEO.2008.4552098

Pugh, J. R., Cryan, M. J., Buss, I. J., Nash, G. R., Ashley, Tim and Rarity, J. R. (2008) Finite difference time domain modelling of non-ideal facets in Mid Infrared lasers. In: 2008 IET 7th International Conference on Computation in Electromagnetics, 2008. CEM 2008. , Brighton, UK, 7-10 Apr 2008. Published in: 2008 IET 7th International Conference on Computation in Electromagnetics, 2008. CEM 2008 pp. 210-211. ISBN 9780863418914. doi:10.1049/cp:20080265

Yin, M., Nash, G. R., Coomber, S. D., Buckle, L., Carrington, P. J., Krier, A., Andreev, A., Przeslak, S. J. B., de Valicourt, G., Smith, S. J., Emeny, M. T. and Ashley, T. (2008) GaInSb/AlInSb multi-quantum-wells for mid-infrared lasers. Applied Physics Letters, Vol. 93 (No. 12). p. 121106. doi:10.1063/1.2990224

(2008) High-performance 40nm gate length InSb p-channel compressively strained quantum well field effect transistors for low-power (VCC=0.5V) logic applications. In: IEEE International Electron Devices Meeting, 2008. IEDM 2008., San Francisco, CA, 15-17 Dec 2008. Published in: IEEE International Electron Devices Meeting, 2008. IEDM 2008. ISBN 9781424423774. doi:10.1109/IEDM.2008.4796798